Enhanced the light absorptance of stain-etched black Silicon decorated by TiN nanoparticles

Abstract

Due to the high energy, narrow distribution and breaking through the absorption limitation, plasmon induced hot electrons has been widely applied to extend the photoresponse spectra of the semiconductor. In order to further enhance the resonance effect of local plasmon based on metallic nanostructures, we used hydrofluoric stain etching method to fabricate nanostructured black silicon (BSi) and deposited titanium nitride (TiN) nanoparticles on its surface by reactive magnetron-sputtering. The results show that the BSi modified by plasmonic TiN nanoparticles has higher absorption in wavelength range from 1100 to 2500 nm compared to that of conventional acid etching of BSi. A PIN photoelectronic detector fabricated by the proposed BSi shows excellent device performance with responsivity of 0.45A/W at 1060 nm in near infrared band.