2019
DOI: 10.1063/1.5127877
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Enhanced terahertz radiation of photoconductive antenna fabricated on GaAs-on-sapphire

Abstract: The terahertz (THz) radiation properties of a photoconductive antenna (PCA) fabricated on a GaAs-on-sapphire (GoS) substrate are reported at sub-THz band. The GaAs layer with a thickness of approximately 1 µm was directly deposited on a sapphire wafer by means of molecular beam epitaxy. A butterfly-shaped antenna structure was then fabricated on the GoS substrate by photolithography, and the device was tested as the emitter of an in-house built THz time-domain spectrometer. The performance of this antenna was … Show more

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Cited by 5 publications
(2 citation statements)
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“…The antenna structures were fabricated on the GaAs-onsapphire wafer by optical lithography and lift-off techniques. 51 The metallic layer was made of 40 nm Cr/200 nm Au. A passivation layer of SiO 2 was deposited on the top of the gap region to improve the optical transmission and thermal properties of the device.…”
Section: Cancellation Effectmentioning
confidence: 99%
“…The antenna structures were fabricated on the GaAs-onsapphire wafer by optical lithography and lift-off techniques. 51 The metallic layer was made of 40 nm Cr/200 nm Au. A passivation layer of SiO 2 was deposited on the top of the gap region to improve the optical transmission and thermal properties of the device.…”
Section: Cancellation Effectmentioning
confidence: 99%
“…The first is an optical method in which the laser beam (frequencies in the THz range (10 15 Hz), mainly pulsed, with low power) is converted to the THz range [3]. Nonlinear crystals [4], photoconductive antennas [5] and free electron lasers (FEL-Free Electron Laser) [6] are used to achieve the THz range. The second method is the so-called electronic method, where microwaves (frequencies in the GHz range, mainly continuous waves and higher powers) are converted up to the THz range [2].…”
Section: Introductionmentioning
confidence: 99%