Enhanced Terahertz Bandwidth and Power from GaAsBi‐based Sources

Heshmat, Barmak; Masnadi-Shirazi, Mostafa; Lewis, Ryan B.; Zhang, Jinye; Tiedje, T.; Gordon, Reuven; Darcie, T.E.

doi:10.1002/adom.201300190

Cited by 22 publications

(17 citation statements)

References 52 publications

(66 reference statements)

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“…Numerous researchers have shown that on of the most effective implementation of dipole NAs in the THz photoconductive antennas and photomixers are arrays of metal dipoles whose length is of the order of the gap size between the electrodes. Arrays of dipole plasmonic NAs have received the name of plasmonic gratings or plasmonic nanorod gratings .…”

Section: Hybrid Photoconductive Thz Antennasmentioning

confidence: 99%

Enhancement of terahertz photoconductive antenna operation by optical nanoantennas

Lepeshov

Gorodetsky

Krasnok

et al. 2016

Laser & Photonics Reviews

142

121

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Photoconductive antennas are promising sources of terahertz radiation that is widely used for spectroscopy, characterization, and imaging of biological objects, deep space studies, scanning of surfaces, and detection of potentially hazardous substances. These antennas are compact and allow for generation of both ultrabroadband pulses and tunable continuous wave terahertz signals at room temperatures, with no need for high‐power optical sources. However, such antennas have relatively low energy conversion efficiency of femtosecond laser pulses or two close pump wavelengths (photomixers) into the pulsed and continuous terahertz radiation, correspondingly. Recently, an approach to solving this problem that involves known methods of nanophotonics applied to terahertz photoconductive antennas and photomixers has been proposed. This approach comprises the use of optical nanoantennas for enhancing the absorption of pump laser radiation in the antenna gap, reducing the lifetime of photoexcited carriers, and improving the antenna thermal efficiency. This Review is intended to systematize the main results obtained by researchers in this promising field of hybrid optical‐to‐terahertz photoconductive antennas and photomixers. We summarize the main results on hybrid THz antennas, compare the approaches to their implementation, and offer further perspectives of their development including an application of all‐dielectric nanoantennas instead of plasmonic ones.

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Section: Hybrid Photoconductive Thz Antennasmentioning

confidence: 99%

Enhancement of terahertz photoconductive antenna operation by optical nanoantennas

Lepeshov

Gorodetsky

Krasnok

et al. 2016

Laser & Photonics Reviews

142

121

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“…Previously, nanoplasmonic structures have been investigated to enhance the performance of THz detectors [17][18][19]. The main advantage of the nanoplasmonic structure for detection is to create a fast sweep out time, and thereby allow for the usage of a low-cost high-mobility long carrier lifetime substrate like semi-insulating GaAs [18,[20][21][22], as opposed to other less common substrates with short carrier lifetimes (such as low-temperature GaAs or GaBiAs) [23][24][25][26][27][28][29][30][31].…”

Section: Introductionmentioning

confidence: 99%

Nanoplasmonics enhanced terahertz sources

et al. 2014

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Arrayed hexagonal metal nanostructures are used to maximize the local current density while providing effective thermal management at the nanoscale, thereby allowing for increased emission from photoconductive terahertz (THz) sources. The THz emission field amplitude was increased by 60% above that of a commercial THz photoconductive antenna, even though the hexagonal nanostructured device had 75% of the bias voltage. The arrayed hexagonal outperforms our previously investigated strip array nanoplasmonic structure by providing stronger localization of the current density near the metal surface with an operating bandwidth of 2.6 THz. This approach is promising to achieve efficient THz sources.

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“…The Bi isoelectronic incorporation results in the dilute‐Bi compounds whose bandgap shrinks significantly because mainly of the anticrossing interaction between Bi 6p orbit level and valence band maximum . The bandgap shrinkage of dilute‐Bi advances the applications on infrared optoelectronic devices such as laser diode, light emitting diode, photodetector, and terahertz devices . The Bi surfactant effect is due to the Bi segregation on surface leading to the changes of growth dynamics and free energy during growth, and hence Bi is usually used as catalyst for microstructure regulation and morphology modification in semiconductors …”

Section: Introductionmentioning

confidence: 99%

Bi‐Induced Electron Concentration Enhancement Being Responsible for Photoluminescence Blueshift and Broadening in InAs Films

Chen

Zhao

et al. 2019

Physica Status Solidi (b)

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Photoluminescence (PL) study is conducted on InAs films molecular beam epitaxially grown on GaAs substrates with different Bi flux levels. A PL peak blueshift accompanied by linewidth broadening is found with the increase of Bi/As flux ratio, in contrast to the common Bi isoelectronic incorporation or surfactant effect. It is, with detailed lineshape analysis and the evidence of PL peak splitting in a magnetic filed, attributed to the electron concentration enhancement induced by Bi flux. The electron concentration in InAs film is evaluated, which is about 5‐fold enhanced as Bi/As flux ratio rises up from 0 to 1 × 10−3. The temperature dependence of the PL spectrum indicates that the carrier redistribution augments while the carrier–phonon Fröhlich scattering weakens in InAs films with high Bi/As flux ratios. These findings reveal a novel Bi effect of electron concentration enhancement, and contribute to the basic knowledge of Bi in III–V semiconductors.

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Enhanced Terahertz Bandwidth and Power from GaAsBi‐based Sources

Cited by 22 publications

References 52 publications

Enhancement of terahertz photoconductive antenna operation by optical nanoantennas

Enhancement of terahertz photoconductive antenna operation by optical nanoantennas

Nanoplasmonics enhanced terahertz sources

Bi‐Induced Electron Concentration Enhancement Being Responsible for Photoluminescence Blueshift and Broadening in InAs Films

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