Enhanced sub-band gap photosensitivity by an asymmetric source–drain electrode low operating voltage oxide transistor

Abstract

The photosensitivity of a phototransistor can be enhanced by using an asymmetric work function source–drain (S–D) electrode.

Blue sensitive sub-band gap negative photoconductance in SnO2/TiO2 NP bilayer oxide transistor

“…Moreover, negative photoconductance of an oxide TFT is rarely reported in the literature. The responsivity of this device is calculated using the following equation [44][45][46] ;…”

“…Moreover, negative photoconductance of an oxide TFT is rarely reported in the literature. The responsivity of this device is calculated using the following equation 44–46 ;where I Ph , P opt , and S are the photocurrent, power of incident light, and active area of the device, respectively. In the accumulation mode, the responsivity of this TFT under different light intensities was plotted, as shown in Fig.…”

Microwave-Assisted Synthesis of CuZnS Nanocrystals for Spectrally Flat Visible Light Photodetector Application Using a ZnO/CuZnS Heterojunction

“…For ZnO sol–gel-derived thin film deposition, a 300 mM precursor solution was prepared by dissolving zinc acetate dihydrate in 2-methoxy ethanol (2MEA) followed by continuous stirring for 30 min at room temperature. , After that, diethanolamine (DEA) was added in a 1:1 mass ratio that worked as a stabilizer. The mixed solution was stirred for 1 more hour at 70 °C to obtain the final transparent precursor solution of ZnO.…”