Abstract:In this article, the fabrication of a Ni0.65Zn0.35Fe2O4/MgO/p-Si heterostructure device has been optimized using the pulsed laser deposition (PLD) technique, and a detailed investigation of its structural, electrical, and magnetic features has been performed experimentally. The electronic and magneto-transport characteristics have been explored in the temperature range of 100–300 K. The current-voltage (I-V) characteristics of the heterojunction have been recorded, which displayed an excellent rectifying magne… Show more
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