Enhanced Specific Detectivity and UV-to-Visible Rejection-Ratio of Visible-Blind Metal–Semiconductor–Metal Photodetectors, Based on Epitaxial GaN/Si(111)

Pal, P. K.; Kaur, Amandeep; Suihkonen, Sami; Lemettinen, Jori; Laha, Apurba; Dhar, Subhabrata; Mahapatra, S.

doi:10.1109/ted.2023.3277798

IEEE Trans. Electron Devices

2023

DOI: 10.1109/ted.2023.3277798

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Enhanced Specific Detectivity and UV-to-Visible Rejection-Ratio of Visible-Blind Metal–Semiconductor–Metal Photodetectors, Based on Epitaxial GaN/Si(111)

P. K. Pal

Amandeep Kaur

Sami Suihkonen

et al.

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(0001)n-ZnO/(0001)p-GaN Heterostructure Based Self-Driven Fast UV Photodetectors and the Role of the Polarization Induced Interfacial 2D Electron Gas Channel

Kaur,

Arora,

Chetry

et al. 2024

ACS Appl. Electron. Mater.

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We investigate the prospects of n-type (0001)n-ZnO/(0001)p-GaN heterostructures as ultraviolet photodetectors. The performance of these devices with different acceptor concentrations in the GaN side is elaborately studied as a function of incident photon energy and photon power. Our study reveals that these devices can serve as highly efficient visible-blind-ultraviolet photodetectors with response times as low as 0.7 ns even in the selfpowered mode. Peak responsivity as high as 11 mA/W and the detectability of a light signal as faint as 9 nW at zero bias condition have been achieved. Acceptor concentration in the GaN side is found to strongly influence the temporal performance of these devices. Moreover, the response times of these detectors can be electrically controlled. Our investigation attributes the fast response characteristics of these devices to the 2D electron gas channel formed at the ZnO side of the interface due to the difference in spontaneous polarization between the two materials. The channel significantly enhances the speed of these devices by providing a high mobility pathway for the photogenerated carriers.

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(0001)n-ZnO/(0001)p-GaN Heterostructure Based Self-Driven Fast UV Photodetectors and the Role of the Polarization Induced Interfacial 2D Electron Gas Channel

Kaur,

Arora,

Chetry

et al. 2024

ACS Appl. Electron. Mater.

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Simulation and Analysis of Plasmonic Photodetector Based on Au Nanoparticles and HfO₂ Interlayer With Improved Performance in Visible Spectral Region

Muthu,

Vaithiyanathan,

Sharma

2023

IEEE Sensors J.

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Enhanced Specific Detectivity and UV-to-Visible Rejection-Ratio of Visible-Blind Metal–Semiconductor–Metal Photodetectors, Based on Epitaxial GaN/Si(111)

Cited by 2 publications

References 46 publications

(0001)n-ZnO/(0001)p-GaN Heterostructure Based Self-Driven Fast UV Photodetectors and the Role of the Polarization Induced Interfacial 2D Electron Gas Channel

(0001)n-ZnO/(0001)p-GaN Heterostructure Based Self-Driven Fast UV Photodetectors and the Role of the Polarization Induced Interfacial 2D Electron Gas Channel

Simulation and Analysis of Plasmonic Photodetector Based on Au Nanoparticles and HfO₂ Interlayer With Improved Performance in Visible Spectral Region

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Enhanced Specific Detectivity and UV-to-Visible Rejection-Ratio of Visible-Blind Metal–Semiconductor–Metal Photodetectors, Based on Epitaxial GaN/Si(111)

Cited by 2 publications

References 46 publications

(0001)n-ZnO/(0001)p-GaN Heterostructure Based Self-Driven Fast UV Photodetectors and the Role of the Polarization Induced Interfacial 2D Electron Gas Channel

(0001)n-ZnO/(0001)p-GaN Heterostructure Based Self-Driven Fast UV Photodetectors and the Role of the Polarization Induced Interfacial 2D Electron Gas Channel

Simulation and Analysis of Plasmonic Photodetector Based on Au Nanoparticles and HfO2 Interlayer With Improved Performance in Visible Spectral Region

Contact Info

Product

Resources

About

Simulation and Analysis of Plasmonic Photodetector Based on Au Nanoparticles and HfO₂ Interlayer With Improved Performance in Visible Spectral Region