2015
DOI: 10.1039/c5nj00707k
|View full text |Cite
|
Sign up to set email alerts
|

Enhanced solar light-driven photocatalytic activity of BiOBr–ZnO heterojunctions with effective separation and transfer properties of photo-generated chargers

Abstract: The high-efficiency separation of photo-generated charges resulted in a catalyst with excellent photocatalytic activity.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

0
14
0

Year Published

2016
2016
2023
2023

Publication Types

Select...
8

Relationship

0
8

Authors

Journals

citations
Cited by 59 publications
(14 citation statements)
references
References 49 publications
(52 reference statements)
0
14
0
Order By: Relevance
“…The n value is determined by the type of the transition in a semiconductor: direct band-gap semiconductor ( n = 1) or indirect band-gap semiconductor ( n = 4). As previously reported, ZnO is specified as n-type direct band-gap semiconductor and BiOBr is specified as p-type indirect band-gap semiconductor [22,23] , so for BiOBr and ZnO, the values of n are 1 and 4, respectively. The band gap energies ( E g ) of BiOBr/ZnO composites samples can be calculated from a plot of ( αh ν) 2 versus photon energy h ν, as shown in Fig.…”
Section: Uv-vis Drsmentioning
confidence: 98%
See 1 more Smart Citation
“…The n value is determined by the type of the transition in a semiconductor: direct band-gap semiconductor ( n = 1) or indirect band-gap semiconductor ( n = 4). As previously reported, ZnO is specified as n-type direct band-gap semiconductor and BiOBr is specified as p-type indirect band-gap semiconductor [22,23] , so for BiOBr and ZnO, the values of n are 1 and 4, respectively. The band gap energies ( E g ) of BiOBr/ZnO composites samples can be calculated from a plot of ( αh ν) 2 versus photon energy h ν, as shown in Fig.…”
Section: Uv-vis Drsmentioning
confidence: 98%
“…The band gap energy values ( E g , eV) for as-synthesized samples were calculated using the function: ( αh ν) 2 = A ( h ν -E g ) n , where A , α and h ν represent constant, absorption coefficient and photon energy, respectively [22] . The n value is determined by the type of the transition in a semiconductor: direct band-gap semiconductor ( n = 1) or indirect band-gap semiconductor ( n = 4).…”
Section: Uv-vis Drsmentioning
confidence: 99%
“…The photocatalytic performance increased three times compared with that of wurtzite hexagonal ZnO which was ascribed to the driving force of the inner electric field, efficiently promoting the separation and transfer of photogenerated electron-hole pairs. Similarly, Yi et al obtained novel heterojunctions of p-type BiOBr and n-type ZnO by loading amounts of BiOBr nanoflakes onto the surface of ZnO nanoflowers [219]. The decolorization rate of BiOBr-ZnO heterojunctions was found to be 3.7 and 4.7 times higher than that of pure BiOBr and ZnO, respectively.…”
Section: Photo-degradation Of Methyl Orange (Mo)mentioning
confidence: 99%
“…To further improve the separation of photo-induced charge carriers, tremendous attempts have been executed including doping, controlling morphology, surface modifying and so on. Among all the methods developed, construction of composites is proved to be an effective method to facilitate the separation of photo-induced carriers and photocatalytic activity of ZnO [6][7][8].…”
Section: Introductionmentioning
confidence: 99%