Enhanced Si quantum dot luminescence in sirich SiC thin-film light emitting diode

Tsai, Ling-Hsuan; Tai, Hung-Yu; Wu, Cheng‐Lung; Lin, Gong−Ru

doi:10.1109/oecc.2012.6276656

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2014

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“…The composite a-nc-Si:H thin films have been the subject of intense research for a variety of applications due to their unique optical and electrical properties. Out of the many applications silicon thin films are used in thin layer transistors [1], tunable photo-diodes [2], and potential applications of composite silicon thin films are in third generation photovoltaic [3] [4]. First benefit of using a-nc-Si:H concerns optical properties.…”

Section: Introductionmentioning

confidence: 99%

AC Impedance Spectroscopy of a-nc-Si:H Thin Films

Tudić¹

2014

ENG

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The AC impedance of amorphous-nano-crystalline silicon composite thin films (a-nc-Si:H) from mHz to MHz at different temperatures has been studied. The samples were prepared by Plasma Enhanced Chemical Vapor Deposition technique. The X-ray diffraction and high resolution electron microscopy showed that films consist of isolated nano-crystals embedded in amorphous matrix. In analysis of impedance data, two approaches were tested: the ideal Deby type equivalent circuit and modified one, with CPE (constant phase elements). It was found that the later better fits to results. The amorphous matrix showed larger resistance and lower capacity than nano-crystals. By heat treatment in vacuum, the capacity for both phases changes, according to expected change in size of ordered domains.

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Section: Introductionmentioning

confidence: 99%

AC Impedance Spectroscopy of a-nc-Si:H Thin Films

Tudić¹

2014

ENG

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show abstract

Enhanced Si quantum dot luminescence in sirich SiC thin-film light emitting diode

Cited by 1 publication

References 6 publications

AC Impedance Spectroscopy of a-nc-Si:H Thin Films

AC Impedance Spectroscopy of a-nc-Si:H Thin Films

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