Enhanced Si Passivation and PERC Solar Cell Efficiency by Atomic Layer Deposited Aluminum Oxide with Two-step Post Annealing

Hsu, Chia-Hsun; Cho, Yun-Shao; Wu, Wan-Yu; Lien, Shui−Yang; Zhang, Xiaoying; Zhu, Wen‐Zhang; Zhang, Sam; Chen, Songyan

doi:10.1186/s11671-019-2969-z

Cited by 25 publications

(17 citation statements)

References 30 publications

(27 reference statements)

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“…When D it is less than 1×10 13 cm -2 , the a-PC-p cell with charged Al 2 O 3 layer possesses a higher e ciency than that without charged Al 2 O 3 layer. However, the tendency operates in the opposite way when D it is over 1×10 13 As discussed before, the cell with the Al 2 O 3 layer and Q it has a higher built-in potential, and thus enhances hole collection which leads to a relatively high FF.…”

Section: Resultsmentioning

confidence: 92%

“…As is known to all, the device quality is mainly determined by factors including a-Si emitter quality and interface quality between a-Si and c-Si. Defect states at the a-Si/c-Si interface could induce strong interface recombination in an a-PC solar cell if the interface defect density is larger than 1×10 13 cm -2 •eV -1 . The mid-gap with a low interface state can be achieved by the insertion of intrinsic hydrogenated amorphous silicon.…”

Section: Introductionmentioning

confidence: 99%

“…The used insulator materials can be positively charged layers, i.e., a-SiN x : H [9] and thermal SiO 2 [10] , which can lead to an effective surface passivation result on lightly doped n-or p-type substrate, as well as some negatively charged layer such as Al 2 O 3 [11] . Negative charges in Al rear passivated cell [12][13][14] . This rear side passivated structure leads to a lower surface recombination loss, better light re ection inside the cell, and less suffered wafer bow for thinner wafers [15][16][17] .…”

Section: Introductionmentioning

confidence: 99%

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Simulation of a Charged Al2O3 Film as an Assisting Passivation Layer for a-Si Passivated Contact P-Type Silicon Solar Cells

Shen

Tang

2021

Silicon

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In this paper, a charged Al 2 O 3 tunneling lm as an assisting for amorphous Si (a-Si) passivated contact layer is proposed and theoretically simulated for its potential application in improving a-Si passivated contact p-type (a-PC-p) solar cell. The concept is based on an Ag/n + c-Si/p c-Si/Al 2 O 3 /p + a-Si/Al structure.The key feature is the introduction of a charged Al 2 O 3 layer, which facilitates the tunneling of holes through an Al 2 O 3 insulator layer accompanied by the reduction of interface defect density (D it ). The negative charge in the Al 2 O 3 layer makes the energy band of p-type c-Si bend upward, realizing the accumulation of holes and repelling of electrons at the c-Si/a-Si interface simultaneously. The in uence of interface negative charges (Q it ) between a-Si and c-Si, Al 2 O 3 thickness, Al 2 O 3 bandgap, interface defect density (D it ) at the a-Si/c-Si interface are systematically investigated on the output parameters of a-PC-p cells. Inserting a charged Al 2 O 3 lm between the c-Si/a-Si interface, a +4.2 % relative e ciency gain is predicted theoretically compared with the a-PC-p cells without the Al 2 O 3 layer. Subsequently, the device performance under various temperatures is simulated, and the insertion of a charged Al 2 O 3 layer obviously decreases the P max temperature coe cient from -0.336 % /℃ to -0.247 % /℃, which is analogous to that of Heterojunction with Intrinsic Thin layer (HIT) solar cell. The above results demonstrate a better temperature response for a-PC-p cells with a charged Al 2 O 3 layer, paving a road for its potential application in high-e ciency and high thermal stability a-PC-p solar cells. Highlights A charged Al 2 O 3 assisting passivation layer is proposed for a-Si PC-p The Al 2 O 3 layer makes the selective carrier tunneling at the c-Si/a-Si interface. A +4.2 % relative e ciency gain is predicted theoretically by the Al 2 O 3The insertion of the Al 2 O 3 layer reduces the P max temperature coe cient greatly.

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Section: Resultsmentioning

confidence: 92%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Simulation of a Charged Al2O3 Film as an Assisting Passivation Layer for a-Si Passivated Contact P-Type Silicon Solar Cells

Shen

Tang

2021

Silicon

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“…The radiofrequency power was 1200 W. The deposition pressure was 5 mTorr. The ALD and ICPCVD processing parameters can also be found elsewhere [20]. For the characterization, the morphologies of the films were observed using a scanning electron microscope (SEM, JSM-7800F, JEOL, Tokyo, Japan).…”

Section: Methodsmentioning

confidence: 99%

Low Reflection and Low Surface Recombination Rate Nano-Needle Texture Formed by Two-Step Etching for Solar Cells

et al. 2019

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In this study, needle-like and pyramidal hybrid black silicon structures were prepared by performing metal-assisted chemical etching (MACE) on alkaline-etched silicon wafers. Effects of the MACE time on properties of the black silicon wafers were investigated. The experimental results showed that a minimal reflectance of 4.6% can be achieved at the MACE time of 9 min. The height of the nanostructures is below 500 nm, unlike the height of micrometers needed to reach the same level of reflectance for the black silicon on planar wafers. A stacked layer of silicon nitride (SiNx) grown by inductively-coupled plasma chemical vapor deposition (ICPCVD) and aluminum oxide (Al2O3) by spatial atomic layer deposition was deposited on the black silicon wafers for passivation and antireflection. The 3 min MACE etched black silicon wafer with a nanostructure height of less than 300 nm passivated by the SiNx/Al2O3 layer showed a low surface recombination rate of 43.6 cm/s. Further optimizing the thickness of ICPCVD-SiNx layer led to a reflectance of 1.4%. The hybrid black silicon with a small nanostructure size, low reflectance, and low surface recombination rate demonstrates great potential for applications in optoelectronic devices.

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Section: Introductionmentioning

confidence: 99%

Simulation of a Charged Al2O3 Film As An Assisting Passivation Layer For a-Si Passivated Contact p-Type Silicon Solar Cells

Shen

Tang

2021

Preprint

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In this paper, a charged Al2O3 tunneling film as an assisting for amorphous Si (a-Si) passivated contact layer is proposed and theoretically simulated for its potential application in improving a-Si passivated contact p-type (a-PC-p) solar cell. The concept is based on an Ag/n+ c-Si/p c-Si/Al2O3/p+ a-Si/Al structure. The key feature is the introduction of a charged Al2O3 layer, which facilitates the tunneling of holes through an Al2O3 insulator layer accompanied by the reduction of interface defect density (Dit). The negative charge in the Al2O3 layer makes the energy band of p-type c-Si bend upward, realizing the accumulation of holes and repelling of electrons at the c-Si/a-Si interface simultaneously. The influence of interface negative charges (Qit) between a-Si and c-Si, Al2O3 thickness, Al2O3 bandgap, interface defect density (Dit) at the a-Si/c-Si interface are systematically investigated on the output parameters of a-PC-p cells. Inserting a charged Al2O3 film between the c-Si/a-Si interface, a +4.2 % relative efficiency gain is predicted theoretically compared with the a-PC-p cells without the Al2O3 layer. Subsequently, the device performance under various temperatures is simulated, and the insertion of a charged Al2O3 layer obviously decreases the Pmax temperature coefficient from -0.336 % /℃ to -0.247 % /℃, which is analogous to that of Heterojunction with Intrinsic Thin layer (HIT) solar cell. The above results demonstrate a better temperature response for a-PC-p cells with a charged Al2O3 layer, paving a road for its potential application in high-efficiency and high thermal stability a-PC-p solar cells.

show abstract

Enhanced Si Passivation and PERC Solar Cell Efficiency by Atomic Layer Deposited Aluminum Oxide with Two-step Post Annealing

Cited by 25 publications

References 30 publications

Simulation of a Charged Al2O3 Film as an Assisting Passivation Layer for a-Si Passivated Contact P-Type Silicon Solar Cells

Simulation of a Charged Al2O3 Film as an Assisting Passivation Layer for a-Si Passivated Contact P-Type Silicon Solar Cells

Low Reflection and Low Surface Recombination Rate Nano-Needle Texture Formed by Two-Step Etching for Solar Cells

Simulation of a Charged Al2O3 Film As An Assisting Passivation Layer For a-Si Passivated Contact p-Type Silicon Solar Cells

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