Enhanced self-phase modulation in silicon nitride waveguides integrated with 2D graphene oxide films

Zhang, Yuning; Wu, Jiayang; Yang, Yunyi; Qu, Yang; Dirani, Houssein El; Crochemore, Romain; Sciancalepore, Corrado; Demongodin, Pierre; Grillet, Christian; Jia, Baohua; Moss, David J.

doi:10.1109/jstqe.2022.3177385

Cited by 45 publications

(54 citation statements)

References 74 publications

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“…For the hybrid waveguides incorporating 2D GO films, their SCG performance is also affected by the new features brought by the GO films, such as improved third-order optical nonlinearity, increased linear loss, and reduced loss arising from the SA. for similar Si3N4 waveguides [52,56]. In contrast, the fit γ's of the hybrid waveguides with 1 and 2 layers of GO were ~11.7 W -1 m -1 and ~27.9 W -1 m -1 , respectively, reflecting the significantly improved optical nonlinearity enabled by incorporating the highly nonlinear GO films.…”

Section: Theoretical Analysis and Discussionmentioning

confidence: 93%

“…(1). We also labelled the peak power range of the amplified optical pulses (I) in this work, together with the those of the optical pulses (II, III) used in previous SPM experiments [54,56]. As can be seen, the peak power of the amplified optical pulses here far exceeds those of the optical pulses employed for the SPM measurements [78,79].…”

Section: Figure 4(b)mentioning

confidence: 96%

“…GO has shown many attractive advantages for implementing hybrid photonic integrated devices with high nonlinear optical performance, including a high third-order nonlinearity (about 10 4 times that of silicon [51,57]), relatively low linear loss compared to other 2D materials (over 100 times lower than that of graphene [52,58]), a large optical bandgap (typically between 2.1 eV -3.6 eV [59,60]) that yields low TPA at near infrared wavelengths), facile fabrication processes with precise control [53,61], and high compatibility with different integrated platforms [50,62]. Based on these, we have demonstrated enhanced self-phase modulation (SPM) of optical pulses (with peak powers ≤ 160 W) in silicon and Si3N4 waveguides integrated with 2D GO films [54][55][56].…”

Section: Introductionmentioning

confidence: 96%

“…Recently, we have demonstrated enhanced nonlinear optical performance with on-chip integrated 2D graphene oxide (GO) films to overcome the intrinsic limitations arising from the material properties of existing photonic integrated platforms [50][51][52][53][54][55][56]. GO has shown many attractive advantages for implementing hybrid photonic integrated devices with high nonlinear optical performance, including a high third-order nonlinearity (about 10 4 times that of silicon [51,57]), relatively low linear loss compared to other 2D materials (over 100 times lower than that of graphene [52,58]), a large optical bandgap (typically between 2.1 eV -3.6 eV [59,60]) that yields low TPA at near infrared wavelengths), facile fabrication processes with precise control [53,61], and high compatibility with different integrated platforms [50,62].…”

Section: Introductionmentioning

confidence: 99%

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Supercontinuum Generation in Graphene Oxide Coated Waveguides

Moss¹

2022

Preprint

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Enhanced supercontinuum generation (SCG) is experimentally demonstrated in integrated silicon nitride (Si3N4) waveguides incorporating highly nonlinear graphene oxide (GO) in the form of two-dimensional (2D) films. On-chip integration of the 2D GO films with precise control of their thickness is realized by using a transfer-free and layer-by-layer coating method. The control of the film length and coating position is achieved via window opening in the upper silica cladding of the photonic integrated chips. Detailed SCG measurements are performed using the fabricated devices with different waveguide geometries and GO film thicknesses, and the results are compared with devices without GO. Significantly improved spectral broadening of ultrashort optical pulses with ultrahigh peaks powers exceeding 1000 W is observed for the hybrid devices, achieving up to 2.4 times improvement in the spectral bandwidth relative to devices without GO. Theoretical analyses for the influence of GO film thickness, coating length, coating position, and waveguide geometry are also provided by fitting the experimental results with theory, showing that there is still significant room for further improvement. This work opens up a promising new avenue towards improving the SCG performance of photonic integrated devices by incorporating functional 2D materials.

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Section: Theoretical Analysis and Discussionmentioning

confidence: 93%

Section: Figure 4(b)mentioning

confidence: 96%

Section: Introductionmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

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Supercontinuum Generation in Graphene Oxide Coated Waveguides

Moss¹

2022

Preprint

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“…shows the schematic of a Si3N4 waveguide integrated with a monolayer GO film. In this work, we chose the Si3N4 platform since it has shown a good compatibility for hybrid integration of 2D GO films [52,56,66]. Compared to silicon that has a relatively small bandgap of ~1.1 eV [43,67], Si3N4 has a large bandgap of ~5.0 eV [48,68] that yields low TPA in the near infrared region.…”

Section: Figure 1(c)mentioning

confidence: 99%

Supercontinuum generation in 2D graphene oxide film coated silicon nitride waveguides

Moss¹

2022

Preprint

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Enhanced Supercontinuum Generation in Integrated Waveguides Incorporated with Graphene Oxide Films

Zhang

Yang

et al. 2023

Adv Materials Technologies

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Enhanced supercontinuum generation (SCG) is experimentally demonstrated in integrated silicon nitride (Si3N4) waveguides incorporating highly nonlinear graphene oxide (GO) in the form of 2D films. On‐chip integration of the 2D GO films with precise control of their thickness is realized by using a transfer‐free and layer‐by‐layer coating method. The control of the film length and coating position is achieved via window opening in the upper silica cladding of the photonic integrated chips. Detailed SCG measurements are performed using the fabricated devices with different waveguide geometries and GO film thicknesses, and the results are compared with devices without GO. Significantly improved spectral broadening of ultrashort optical pulses with ultrahigh peak powers exceeding 1000 W is observed for the hybrid devices, achieving up to 2.4 times improvement in the spectral bandwidth relative to devices without GO. Theoretical analyses for the influence of GO film thickness, coating length, coating position, and waveguide geometry are also provided by fitting the experimental results with theory, showing that there is still significant room for further improvement. This work opens up a new avenue toward improving the SCG performance of photonic integrated devices by incorporating functional 2D materials.

show abstract

Enhanced self-phase modulation in silicon nitride waveguides integrated with 2D graphene oxide films

Cited by 45 publications

References 74 publications

Supercontinuum Generation in Graphene Oxide Coated Waveguides

Supercontinuum Generation in Graphene Oxide Coated Waveguides

Supercontinuum generation in 2D graphene oxide film coated silicon nitride waveguides

Enhanced Supercontinuum Generation in Integrated Waveguides Incorporated with Graphene Oxide Films

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