Enhanced room-temperature thermoelectric performance of p-type BiSbTe by reducing carrier concentration

Abstract

Ti substitution leads to enhanced thermoelectric performance of p-type Bi0.5Sb1.5Te3 due to carrier concentration regulation, alloy effect and anisotropic microstructure.

Multifunctional Wearable Thermoelectrics for Personal Thermal Management

“…Here, near-room temperature thermoelectric materials suitable for thermoelectric PTM can be classified into nonflexible and flexible types as summarized in Figure 6. Figure 6a and Table 1 summarize nonflexible thermoelectric materials with high near-room temperature thermoelectric performance, which are mainly are bulk inorganic materials, such as Bi 2 Te 3based, [80][81][82][83][84][85][86] Ag 2 Se-based, [87] and Mg 2 Bi 3 -based thermoelectric materials. [88] Among them, bulk Bi 2 Te 3 -based thermoelectric materials are the most well-developed and widely applied mainly due to their high S 2 σ values, which have approached the ultrahigh near-room temperature zT of 1.18 (300 K) of n-type Bi 2 Te 2.7 Se 0.3 [89] and 1.86 (320 K) of p-type Bi 0.5 Sb 1.5 Te 3 .…”

“… zT at near room‐temperature (≈300 K) of the state‐of‐the‐art a) nonflexible [ 80–82,84–85,87–90,106 ] and b) flexible thermoelectric materials. [ 91–93,95–99,101,105 ] …”

“…[25,107] Additionally, effective Figure 6. zT at near room-temperature (≈300 K) of the state-of-the-art a) nonflexible [80][81][82][84][85][87][88][89][90]106] and b) flexible thermoelectric materials. [91][92][93][95][96][97][98][99]101,105] skin temperature control also requires fast and sufficient heat exchange between the human skin and the thermoelectric PTM.…”

Precise Regulation of Carrier Concentration in Thermoelectric BiSbTe Alloys via Magnetic Doping

“…10,11 For the practical applications of p-type (Bi,Sb) 2 Te 3 , it is essential to improve its room temperature TE performance. 12 Elemental doping is effective on improving the TE performance by increasing the carrier concentrations of BiSbTe alloys, but this method normally results in shifting of the maximum zT to higher temperatures. The carrier concentration of p-type Bi 0.5 Sb 1.5 Te 3 is highly sensitive to these doping elements such as Cu, 13−15 Ag, 16−19 and Pb, 20 and the fine regulation of its carrier concentration is quite difficult in this system.…”

“…Currently, the best TE materials and devices applied in the temperature range from room temperature to 300 °C are still mainly restricted to Bi–Sb–Te-based alloys, wherein p-type Bi 0.5 Sb 1.5 Te 3 is one of the most promising alloys. , For the practical applications of p-type (Bi,Sb) 2 Te 3 , it is essential to improve its room temperature TE performance . Elemental doping is effective on improving the TE performance by increasing the carrier concentrations of BiSbTe alloys, but this method normally results in shifting of the maximum zT to higher temperatures.…”