Enhanced room-temperature thermoelectric performance of In-doped ZnO:Al thin films through prefabricated layer doping method

Zheng, Zhaoke; Fan, Ping; Luo, Jingting; Liang, Guangxing; Zhang, Dongping

doi:10.1007/s13391-015-4441-2

Cited by 10 publications

(8 citation statements)

References 25 publications

(23 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…17 Most of the published literature utilized dual dopants which have either smaller or larger sizes than the Zn 2+ ion (0.074 nm), such as Al 3+ (0.053 nm) − Mg 3+ (0.072 nm) doped ZnO bulk, 9 Al 3+ (0.053 nm) − Ga 3+ (0.062 nm) doped ZnO bulk, 10 Al 3+ (0.053 nm) − Ti 3+ (0.067 nm) doped ZnO bulk, 11,12 Al 3+ (0.053 nm) − Ni 2+ (0.070 nm) doped ZnO bulk, 11 or Sb 3+ (0.076 nm) − Sn 2+ (0.118 nm) doped ZnO bulk. 13 Few reports used dual dopants with opposite ion sizes, such as Al 3+ (0.053 nm) − In 3+ (0.080 nm) doped ZnO thin films, 15,17 and Ga 3+ (0.062 nm) − In 3+ (0.080 nm) doped ZnO superlattice structures. 16 Compared to those regarding the dual-doped bulk ZnO thermoelectric materials, only a few studies on the thermoelectric property of dual-doped ZnO thin films have been reported.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Thermoelectric Properties of Indium and Gallium Dually Doped ZnO Thin Films

Nguyen

Liu

et al. 2016

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

We investigated the effect of single and multidopants on the thermoelectrical properties of host ZnO films. Incorporation of the single dopant Ga in the ZnO films improved the conductivity and mobility but lowered the Seebeck coefficient. Dual Ga- and In-doped ZnO thin films show slightly decreased electrical conductivity but improved Seebeck coefficient. The variation of thermoelectric properties is discussed in terms of film crystallinity, which is subject to the dopants' radius. Small amounts of In dopants with a large radius may introduce localized regions in the host film, affecting the thermoelectric properties. Consequently, a 1.5 times increase in power factor, three times reduction in thermal conductivity, and 5-fold enhancement in the figure of merit ZT have been achieved at 110 °C. The results also indicate that the balanced control of both electron and lattice thermal conductivities through dopant selection are necessary to attain low total thermal conductivity.

show abstract

Section: Introductionmentioning

confidence: 99%

“…, reported that the power factor of the In-doped AZO thin films shows a a maximum PF value of 2.22 × 10 –4 Wm –1 K –2 at 300 K as the In content increases to 0.71%. However, they do not report the thermal conductivity and figure of merit of their In-doped AZO thin films …”

Section: Introductionmentioning

confidence: 99%

Thermoelectric Properties of Indium and Gallium Dually Doped ZnO Thin Films

Nguyen

Liu

et al. 2016

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

show abstract

“…Temperature-dependent resistivity (a), Seebeck coefficient (b), and power factor (c) of the RT-ZnO:Al, 300 °C-ZnO:Al, RT-Au-ZnO:Al, 300 °C-Au-ZnO:Al, RT-CNT-ZnO:Al, and 300 °C-CNT-ZnO:Al films and a comparison of the power factors of the 300 °C-CNT-ZnO:Al film to other results (d). …”

Section: Resultsmentioning

confidence: 99%

Improvement of Thermoelectric Properties of Evaporated ZnO:Al Films by CNT and Au Nanocomposites

Liu

Lan

et al. 2020

J. Phys. Chem. C

View full text Add to dashboard Cite

Nanocomposites are a popular choice to improve the thermoelectric (TE) performance of materials by breaking the tradeoff among the TE parameters. However, the generation of depletion layers at the nanocomposite interfaces limits the improvement of the TE performance. This study employs carbon nanotube (CNT) and Au nanocomposites to solve this problem in evaporated ZnO:Al films assisted by a radio frequency atomic source. The results show that the carrier concentration and mobility are tuned individually by the CNT and Au nanocomposites. The conductivity increases by increasing the carrier concentration and mobility of the Au and CNT nanocomposites, respectively. The disappearance of the depletion layer at the CNT interface, eliminated by the substrate temperature, enhances the Seebeck coefficient and thereby doubles the power factor, which is 502.72 μW·m–1·K–2 for the 300 °C-CNT-ZnO:Al film. The CNT composite has no effect on thermal conductivity. This results in the ZT improvement by 1.35 times (0.081 at 523 K). This nanocomposite method presents an effective and low-cost method to improve the ZT value of TE materials.

show abstract

“…However, the solubility limit of the dopant in single doping limits the improvement of ZT. Therefore, efforts in dual doping to improve the thermoelectric properties of ZnO materials have been conducted such as Al-Mg [37], Al-Ga [13], Al-Ti [38,39], Al-Ni [38], Sb-Sn [40], Al-In and Ga-In [41][42][43][44][45][46][47].…”

Section: Dual Dopant Doped Zno Based Bulks and Thin Filmsmentioning

confidence: 99%

Effect of dopants and nanostructuring on the thermoelectric properties of ZnO materials

Luu

Duong

Phan

2019

Adv. Nat. Sci: Nanosci. Nanotechnol.

View full text Add to dashboard Cite

Zinc oxides have attracted attention in high-temperature waste heat recovery due to their high melting points. This review aims to provide a comprehensive summary of the effects of dopant on thermoelectric properties of ZnO based bulk, thin films, nanowire as well as the effects of nanostructuring on ZnO based materials. In general, the thermoelectric performance can be enhanced by a single doping. Among single dopant elements, Al dopant seems to be effective dopant resulting in better thermoelectric properties. However, the solubility limit of the dopant in single doping limits the improvement of thermoelectric performance. Efforts in dual doping to improve the thermoelectric properties of ZnO materials have been conducted. As a result, the drastic improvement of the thermoelectric performance from Al-Ga dually doped ZnO bulk and Ga-In dually doped ZnO thin films shows strong evidence of this approach. In addition to doping effects, the thermoelectric performance can also be enhanced through structural effects such as mismatches between the film and substrate, morphology, thermal treatments or introducing nano-precipitated materials. In addition, the low-dimensional structure such as nanowire structure is promising for improving the thermoelectric properties of materials because of their strong quantum confinement effect. This leads to the increase of the Seebeck coefficient according to the Mott's relationship without lowering the electrical conductivity.

show abstract

Enhanced room-temperature thermoelectric performance of In-doped ZnO:Al thin films through prefabricated layer doping method

Cited by 10 publications

References 25 publications

Thermoelectric Properties of Indium and Gallium Dually Doped ZnO Thin Films

Thermoelectric Properties of Indium and Gallium Dually Doped ZnO Thin Films

Improvement of Thermoelectric Properties of Evaporated ZnO:Al Films by CNT and Au Nanocomposites

Effect of dopants and nanostructuring on the thermoelectric properties of ZnO materials

Contact Info

Product

Resources

About