2020
DOI: 10.1016/j.mssp.2020.105117
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Enhanced room temperature ammonia gas sensing properties of strontium doped ZnO thin films by cost-effective SILAR method

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Cited by 45 publications
(11 citation statements)
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“…7, the sensing results depict the response of the Ag-ZnO sensor towards ethanol. In particular, the sensor at a temperature of 325 1C exhibited a response of 32.5 towards Compared to other synthesis methods, SILAR is a deposition technique applicable for the synthesis of binary semiconducting thin films [84][85][86][87] as it is a simple and less laborious method. Nwanya et al 88 synthesized thin films of ZnO/CdO using this method at room temperature.…”
Section: Various Fabrication Techniques For Zno Nanoparticles and The...mentioning
confidence: 99%
See 1 more Smart Citation
“…7, the sensing results depict the response of the Ag-ZnO sensor towards ethanol. In particular, the sensor at a temperature of 325 1C exhibited a response of 32.5 towards Compared to other synthesis methods, SILAR is a deposition technique applicable for the synthesis of binary semiconducting thin films [84][85][86][87] as it is a simple and less laborious method. Nwanya et al 88 synthesized thin films of ZnO/CdO using this method at room temperature.…”
Section: Various Fabrication Techniques For Zno Nanoparticles and The...mentioning
confidence: 99%
“…Compared to other synthesis methods, SILAR is a deposition technique applicable for the synthesis of binary semiconducting thin films 84–87 as it is a simple and less laborious method. Nwanya et al 88 synthesized thin films of ZnO/CdO using this method at room temperature.…”
Section: Various Fabrication Techniques For Zno Nanoparticles and The...mentioning
confidence: 99%
“…ZnO is an n-type semiconductor, and its resistance may decrease in the presence of reducing gas such as ammonia. Further, the sensing area and operating temperature (room temperature) are maintained steady for room-temperature studies. The sensitivity of the sensor element can be determined using the following equation …”
Section: Gas-sensing Characterizationmentioning
confidence: 99%
“…As a kind of metal oxide semiconductor material, ZnO has attracted tremendous attention in the field of gas sensing in recent years, with the characteristics of easy fabrication, diverse morphology, and the ability to be compounded with a variety of materials. 11,12 However, the shortcomings of pure ZnObased gas sensors, such as high working temperature, low sensitivity, and poor selectivity, still exist and need to be further improved. 13−15 Meanwhile, as the latest type of porous material with abundant potential applications, metal−organic frameworks (MOFs) possess unique crystalline porosity with a periodic network structure formed by the self-assembly of transition-metal ions and organic ligands.…”
Section: Introductionmentioning
confidence: 99%
“…As a kind of metal oxide semiconductor material, ZnO has attracted tremendous attention in the field of gas sensing in recent years, with the characteristics of easy fabrication, diverse morphology, and the ability to be compounded with a variety of materials. , However, the shortcomings of pure ZnO-based gas sensors, such as high working temperature, low sensitivity, and poor selectivity, still exist and need to be further improved. Meanwhile, as the latest type of porous material with abundant potential applications, metal–organic frameworks (MOFs) possess unique crystalline porosity with a periodic network structure formed by the self-assembly of transition-metal ions and organic ligands . On account of the advantages of low density, large specific surface area, regular and adjustable pore size, diverse topology structure, and capable of cuttability, it is often utilized as the starting template in the process of material design and synthesis. For example, the BiVO 4 –MOF photoanode obtained by the in situ modification of BiVO 4 with Co-MOF has excellent photoelectrochemical water oxidation performance properties .…”
Section: Introductionmentioning
confidence: 99%