Enhanced resistive switching properties of HfAlOx/ZrO2- based RRAM devices

Reddy, P.R. Sekhar; Nallagatla, Venkata Raveendra; Kumar, Yedluri Anil; Murali, G.

doi:10.1016/j.pnsc.2022.09.013

“…Further, the values of S2 increases to >2, such behavior follows from the relation (I∝V 2 ) and is confirmed by the space charge limited conduction [17]. Finally, the LRS state shows the S3 ~1 for Au/HZO/TiN devices, which due to ohmic conduction, indicating the linear behavior of the devices where current is proportional tothe voltage is observed [18,19] . However, the Au/HZO/TiN device offers stability and improved migration of oxygen vacancies in the migration in the devices structure.…”

Section: Resultssupporting

confidence: 54%

Structural and electrical characteristics of Zr-doped HfO2 (HZO) thin films deposited by atomic layer deposition for RRAM applications

Reddy

2023

MI

0

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In this study, Zr-doped HfO2 (HZO) based resistive random-access memory (RRAM) device were fabricated. The Hf:Zr (1:1) ratio in the HZO films were controlled by changing the HfO2 and ZrO2 cycle ratio during the atomic layer deposition (ALD) process. Next, we studied the structural and electrical properties of the Au/HZO/TiN RRAM device structure. The RRAM devices exhibits an excellent resistance ratio of the high resistance state (HRS) to the low resistance state (LRS) of ~103 A, and as well as good endurance (300 cycles) and retention (>103 s), respectively. Further, the device showed different conduction mechanism in LRS and HRS modes. The lower biased linear region is dominated by ohmic conductivity, whereas the higher biased nonlinear region is dominated by a space charge limited current conduction. This device is suitable for application in future high-density nonvolatile memory RRAM devices.

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“…Further, the values of S2 increases to >2, such behavior follows from the relation (I ∝ V 2 ) and is confirmed by the space charge limited conduction [17]. Finally, the LRS state shows the S3 ~1 for Au/HZO/TiN devices, which due to ohmic conduction, indicating the linear behavior of the devices where current is proportional to the voltage is observed [18,19]. However, the Au/HZO/TiN device offers stability and improved migration of oxygen vacancies in the migration in the devices structure.…”

Section: Resultssupporting

confidence: 52%

Structural and electrical characteristics of Zr-doped HfO2 (HZO) thin films deposited by atomic layer deposition for RRAM applications

Reddy

2024

Mater. Tech. Rep.

0

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In this study, Zr-doped HfO2 (HZO) based resistive random-access memory (RRAM) device were fabricated. The Hf:Zr (1:1) ratio in the HZO films were controlled by changing the HfO2 and ZrO2 cycle ratio during the atomic layer deposition (ALD) process. Next, we studied the structural and electrical properties of the Au/HZO/TiN RRAM device structure. The RRAM devices exhibits an excellent resistance ratio of the high resistance state (HRS) to the low resistance state (LRS) of ~103 A, and as well as good endurance (300 cycles) and retention (>103 s), respectively. Further, the device showed different conduction mechanism in LRS and HRS modes. The lower biased linear region is dominated by ohmic conductivity, whereas the higher biased nonlinear region is dominated by a space charge limited current conduction. This device is suitable for application in future high-density nonvolatile memory RRAM devices.

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“…Ion effect is the main mechanism of memristors at present. [79][80][81][82][83] The memristive materials based on the anionic effect mainly include transition metal oxides, perovskite complex oxides, and wide band gap dielectric oxide insulators. The oxide insulators can be regarded as intrinsic semiconductors caused by defects such as oxygen deficiency or excess.…”

Section: Ion Migrationmentioning

confidence: 99%

Organic Frameworks Memristor: An Emerging Candidate for Data Storage, Artificial Synapse, and Neuromorphic Device

Xu,

Li,

Xia

et al. 2024

Adv Funct Materials

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Memristors have recently become powerful competitors toward artificial synapses and neuromorphic computation, arising from their structural and electrical similarity to biological synapses and neurons. From the diversity of materials, numerous organic and inorganic materials have proven to exhibit great potential in the application of memristors. Herein, this work focuses on a class of memristors based on organic frameworks (OFs) materials, and pay attention to the most advanced experimental demonstrations. First, the typical device structures and memristive switching mechanisms are introduced. Second, the latest progress of OFs‐based memristors is comprehensively summarized, including metal‐organic frameworks (MOFs), covalent organic frameworks (COFs), and hydrogen‐bonded organic frameworks (HOFs), as well as their applications in data storage, artificial synapses, and neuromorphic devices. Finally, the future challenges and prospects of OFs‐based memristors are deeply discussed.

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Enhanced resistive switching properties of HfAlOx/ZrO2- based RRAM devices

Cited by 7 publications

References 31 publications

Structural and electrical characteristics of Zr-doped HfO2 (HZO) thin films deposited by atomic layer deposition for RRAM applications

Structural and electrical characteristics of Zr-doped HfO2 (HZO) thin films deposited by atomic layer deposition for RRAM applications

Structural and electrical characteristics of Zr-doped HfO2 (HZO) thin films deposited by atomic layer deposition for RRAM applications

Organic Frameworks Memristor: An Emerging Candidate for Data Storage, Artificial Synapse, and Neuromorphic Device

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