Enhanced resistance of single-layer graphene to ion bombardment

López, Josué J.; Greer, Frank; Greer, Julia R.

doi:10.1063/1.3428466

Cited by 29 publications

(24 citation statements)

References 20 publications

(18 reference statements)

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“…Theoretically, each ion that transits the graphene has the ability to remove 1-2 atoms from the lattice, and recent calculations estimate the sputter yield for 3 keV argon on graphene to be of order 0.5 carbon atoms removed from the lattice per incident argon ion (21). A recent experiment suggests that graphene may be significantly more resistant to ion sputtering than theoretical models predict (22). We found empirically that cooling the graphene during the ion exposure was required to nucleate the number of pores consistent with the theoretical prediction.…”

Section: Resultsmentioning

confidence: 95%

Atom-by-atom nucleation and growth of graphene nanopores

Russo

Golovchenko

2012

Proc. Natl. Acad. Sci. U.S.A.

264

214

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Graphene is an ideal thin membrane substrate for creating molecule-scale devices. Here we demonstrate a scalable method for creating extremely small structures in graphene with atomic precision. It consists of inducing defect nucleation centers with energetic ions, followed by edge-selective electron recoil sputtering. As a first application, we create graphene nanopores with radii as small as 3 Å, which corresponds to 10 atoms removed. We observe carbon atom removal from the nanopore edge in situ using an aberration-corrected electron microscope, measure the crosssection for the process, and obtain a mean edge atom displacement energy of 14.1 AE 0.1 eV. This approach does not require focused beams and allows scalable production of single nanopores and arrays of monodisperse nanopores for atomic-scale selectively permeable membranes.ion beam irradiation | atomic displacement | electron microscopy F abricating device structures with the precision of single atoms has long been a goal of nanoscale science (1). The recent advent of graphene (2, 3) provides an ideal thin membrane substrate to achieve this goal. Solid-state nanopore devices in thin membranes are of particular interest because they allow the localization, detection, and characterization of single DNA or protein molecules (4, 5). Nanopores in graphene extend this capability to transelectrode sensors and permeable membranes with atomicscale resolution (6). But the development and wide-scale application of such devices is severely limited by the need for atomicscale focused beams for their fabrication (7,8). Here we show how nanopores in graphene can be fabricated with atomic precision without the need for such focused beams.From the study of electron and ion beam-induced damage in graphene-based materials, it is known there is a minimum recoil energy required to remove an atom from the interior of the lattice, called the displacement energy E d (9-11). This threshold entails a minimum kinetic energy for the incident particle to displace an interior atom. There is some controversy over the precise displacement energy for an atom in a graphene lattice (10-15), but experiments have clearly shown that 60 and 80 keV electrons are below this threshold (16,17). Topological defects that do not involve carbon atom removal may also be transiently induced in graphene (18).Recently experiments have also shown that graphene edge atoms can be removed by 80 keV electrons in a transmission electron microscope (TEM) (16). Here we demonstrate that edgeatom removal can be nucleated in the interior of the lattice by low-energy ion beam exposure. We then show that subsequent growth of nanopores in graphene can be effected with atomicscale precision and repeatability with unfocused, subthreshold electron beams. ResultsWe started with suspended graphene (Fig. 1A) grown by chemical vapor deposition on annealed copper (19), which was then transferred to holey carbon TEM grids. We created pore nucleation sites with an argon ion beam ( Fig. 1 B and C) by cooling the sample to 148 ...

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Section: Resultsmentioning

confidence: 95%

Atom-by-atom nucleation and growth of graphene nanopores

Russo

Golovchenko

2012

Proc. Natl. Acad. Sci. U.S.A.

264

214

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“…Use of freestanding graphene allowed us to create patterns while avoiding undesirable secondary effects during FIB milling (e.g., ion implanting and substrate swelling), unlike frequently reported for the supported graphene samples. 13,15,32,50 CONCLUSION:…”

Section: Resultsmentioning

confidence: 99%

Understanding the interaction between energetic ions and freestanding graphene towards practical 2D perforation

et al. 2016

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“…In addition, such studies are important to develop radiation-hard graphene-based electronics that can stand up to extreme conditions such as charged particle irradiation in space. 5 Several recent works in the field of energetic particle irradiation of graphene have used positive ions [6][7][8][9][10][11] or protons. 12 It has been suggested that such irradiations create lattice defects in graphene.…”

mentioning

confidence: 99%

Effect of electron-beam irradiation on graphene field effect devices

Childres

Jauregui

Foxe

et al. 2010

Applied Physics Letters

167

127

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Electron beam exposure is a commonly used tool for fabricating and imaging graphene-based devices. Here we present a study of the effects of electron-beam irradiation on the electronic transport properties of graphene and the operation of graphene field-effect transistors (GFET). Exposure to a 30 keV electron-beam caused negative shifts in the charge-neutral point (CNP) of the GFET, interpreted as due to n-doping in the graphene from the interaction of the energetic electron beam with the substrate. The shift of the CNP is substantially reduced for suspended graphene devices. The electron beam is seen to also decrease the carrier mobilities and minimum conductivity, indicating defects created in the graphene. The findings are valuable for understanding the effects of radiation damage on graphene and for the development of radiation-hard graphene-based electronics.Comment: 8 pages, 3 figure

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Enhanced resistance of single-layer graphene to ion bombardment

Cited by 29 publications

References 20 publications

Atom-by-atom nucleation and growth of graphene nanopores

Atom-by-atom nucleation and growth of graphene nanopores

Understanding the interaction between energetic ions and freestanding graphene towards practical 2D perforation

Effect of electron-beam irradiation on graphene field effect devices

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