2007
DOI: 10.1117/12.711796
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Enhanced reflectance of interface engineered Mo/Si multilayers produced by thermal particle deposition

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Cited by 37 publications
(28 citation statements)
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“…This is achieved by choosing a high contrast of the indices of refraction with simultaneously the lowest possible absorptivity, i.e., by maximizing the ratio Re( A − S )/ Im( A ). Indeed, choosing Mo as absorber material in Mo/Si multilayer mirrors maximizes this ratio, which is why Mo/Si mirrors provide the reflectivity record for multilayers at 13.5 nm wavelength [33].…”
Section: Anomalous Transmissionmentioning
confidence: 99%
See 1 more Smart Citation
“…This is achieved by choosing a high contrast of the indices of refraction with simultaneously the lowest possible absorptivity, i.e., by maximizing the ratio Re( A − S )/ Im( A ). Indeed, choosing Mo as absorber material in Mo/Si multilayer mirrors maximizes this ratio, which is why Mo/Si mirrors provide the reflectivity record for multilayers at 13.5 nm wavelength [33].…”
Section: Anomalous Transmissionmentioning
confidence: 99%
“…A more detailed discussion and choice of materials would therefore ultimately include also soft interfaces and diffusion barriers [33,41].…”
Section: Design Of An At Filter For 135 Nm Wavelengthmentioning
confidence: 99%
“…The maximal theoretical reflectivity achieves ~76% at normal incidence. 5,6 Measured reflectivities of Mo/Si MXMs are known to be inferior to their theoretical values by 10−15 %. As the result in a multil-mirror optical system (for example, in EUV lithographs) the total performance would worsen dramatically.…”
Section: Introductionmentioning
confidence: 99%
“…This allows for the use of ML mirrors with silicon spacers and high reflectivities. Indeed, Mo/Si ML mirrors have a theoretical reflectivity of 74 % and a value of 70.5 % has already been experimentally demonstrated [39]. Although this reflectivity is already very close to the theoretical maximum, up to eleven optical elements are used in the EUV imaging system resulting in a very low overall transmission of < 3 %.…”
Section: Euv Lithographymentioning
confidence: 99%