Enhanced radiation from a plasma-imbedded antenna

Abstract

PROCEEDINGS LETTERS 1595 401 / Fig. I . Id,.,n-Vd,.l. characteristic of an experimental GaSe FET. Pinch-off occurs at V,,,. =20 volts. Inset shows a schematic cross section of device configuration.not affected by the presence of surface states. A properly formed Schottky barrier has nearly theoretical reverse current and does not exhibit the drift and instability problems associated with MOS structures. Hence the Schottky barrier gate technique can be employed to construct active devices from materials which cannot be otherwise utilized. GaSe2.3 is a layer semiconductor having 2 eV band gap. A recent study of surface barriers on GaSe4 indicates that the advantages of the Schottky barrier gate technique will allow the construction of a field-effect device from this material.Experimental devices were constructed from -8 p thick cleaved layers of p-type (p -1014/cm3) GaSe. A schematic cross section appears in the inset of Fig.

The enhancement mechanism of thin plasma layer on antenna radiation

“…1 But when the thickness of plasma is less than the skin depth of electromagnetic field (called the thin plasma layer), the radiation can be enhanced with a range of plasma density. 2 The phenomenon of radiation enhancement from a spherical antenna covered by a plasma layer was reported by Messiaen and Vandenplas. 3 In addition, a similar phenomenon was observed in a cylindrical antenna system.…”

“…The enhancement mechanism of thin plasma layer on antenna radiation Chunsheng Wang, 1,a) Xueai Li, 2 A model of plasma-antenna is carried out to study the radiation enhancement mechanism of antenna covered by thin plasma layer. The results show when the radiation intensity achieves maximum, a region of equal electric field is formed due to the reflection of electric field at the interface of plasma and air.…”

Antenna radiation enhanced by a negative permittivity material: plasma

“…But, another phenomenon, the intensity of antenna radiation can be enhanced if the parameters of plasma layer are chosen properly, has been proved by numerical and experimental studies. This phenomenon shows a way to overcome the blackout problem [3][4]. So the effect of plasma layer on antenna radiation is determined by parameters of plasma layer.…”

The mechanism of the effect of a plasma layer with negative permittivity on the antenna radiation field

“…However, another phenomenon, the enhancing of the intensity of antenna radiation when parameters of the plasma layer are chosen properly, has been demonstrated in numerical and experimental studies. This phenomenon suggests a way of overcoming the blackout problem, 3,4 i.e., the effect of the plasma layer on antenna radiation is determined by parameters of the plasma layer.…”