Electroluminescence emission from surface acoustic wave-driven light-emitting diodes (SAWLEDs) is studied by means of time-resolved techniques. We show that the intensity of the SAW-induced electroluminescence is modulated at the SAW frequency (∼ 1 GHz), demonstrating electron injection into the p-type region synchronous with the SAW wavefronts.Surface-acoustic-wave (SAW) based devices are nowadays widely used for mobile and wireless applications, as well as for satellite communications and military applications [1]. The large-scale diffusion of sophisticated communication systems stimulated a fast rise in the SAW-based device market, reaching a production volume of several million devices per day [2]. More recently SAWs have attracted the interest of the semiconductor community in view of the exploitation of their interaction properties with two-dimensional-electron-gases (2DEGs) embedded in semiconductor heterostructures [3,4]. SAWs propagating through mesas containing highquality 2DEGs indeed drive modifications on the 2DEG equilibrium state. Acoustic waves propagating along piezo-electric substrates are accompanied by potential waves which can trap electrons in their minima and induce dc currents or voltages [5,6,7]. The discovery of the so-called acoustoelectric effect was followed by the proposal of innovative device concepts. Among these Talyanskii et al. proposed the implementation of a novel current standard, demonstrating very precise acoustoelectric current quantization due to charge drag by SAWs through a quantum point contact [8,9,10,11,12]. Control over the constriction width allows very precise selection of the number of electrons packed in each SAW minimum down to the single-electron-transport regime. One of the most appealing applications proposed after the first report of the acoustoelectric quantized current was to incorporate single-electron SAW pumps in planar 2D electron/2D hole gas (n-p) junctions to fabricate high-repetition-rate single-photon sources.