2020
DOI: 10.1039/d0ta08059d
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Enhanced power factor of n-type Bi2Te2.8Se0.2 alloys through an efficient one-step sintering strategy for low-grade heat harvesting

Abstract: Hot deformation (HD) has been reported as an effective approach to recover the degraded power factor of n-type Bi2Te3-based alloys prepared by hot pressing (HP). In this work, we report...

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Cited by 7 publications
(4 citation statements)
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“…The Bi 2 Te 3 crystal has electrical anisotropy, and an anisotropic Bi 2 Te 3 polycrystal therefore indicates low ρ in a particular direction. For instance, a repeated SPS process and a repeated hot deformation process controlled the texture and decreased ρ. , A zone melting process also formed textured structures and suppressed ρ. , Tuning the peak sintering temperature was a good way to improve PF by manipulating the donor-like effect . By controlling anisotropy, a very high zT value of 1.6 at T = 300 K was achieved in Bi 2 Te 2.7 Se 0.3 films .…”
Section: Introductionmentioning
confidence: 98%
See 1 more Smart Citation
“…The Bi 2 Te 3 crystal has electrical anisotropy, and an anisotropic Bi 2 Te 3 polycrystal therefore indicates low ρ in a particular direction. For instance, a repeated SPS process and a repeated hot deformation process controlled the texture and decreased ρ. , A zone melting process also formed textured structures and suppressed ρ. , Tuning the peak sintering temperature was a good way to improve PF by manipulating the donor-like effect . By controlling anisotropy, a very high zT value of 1.6 at T = 300 K was achieved in Bi 2 Te 2.7 Se 0.3 films .…”
Section: Introductionmentioning
confidence: 98%
“…21,22 Tuning the peak sintering temperature was a good way to improve PF by manipulating the donor-like effect. 23 By controlling anisotropy, a very high zT value of 1.6 at T = 300 K was achieved in Bi 2 Te 2.7 Se 0.3 films. 24 Recently, precision grain boundary engineering has been applied to enhance the zT of Bi 2 Te 2.7 Se 0.3 to the maximum value of 1.01.…”
Section: ■ Introductionmentioning
confidence: 99%
“…[16][17][18] Te is a p-type semiconductor with a band gap of around 0.35 eV at room temperature. To date, many Te-based high-performance thermoelectric materials have been reported, for example, Bi 2 Te 3 -based alloys, [19][20][21][22] PbTe, 23 GeTe, 24 SnTe, 25 etc. Besides, elemental Te is also a promising thermoelectric material with the ZT reaching unity at ∼600 K. 26 The crystalline structure of Te is highly anisotropic, which gives it a strong tendency to grow along the c axis and form 1D nanostructures.…”
Section: Introductionmentioning
confidence: 99%
“…[24][25][26] Hence, mechanical strength is of equal importance to TE performance for guaranteeing service stability. Furthermore, the miniature Bi 2 Te 3 based thermoelectric devices have attracted more attention due to their potentials for being applied in electronic, optoelectronic, and bioanalytical devices, [27][28][29][30] such as microprocessors, semiconductor lasers, and DNA micro-arrays, which puts forward much severer standards for the mechanical strength to machine the Bi 2 Te 3 based materials into micron-scale or even smaller size. However, the crystal structure of Bi 2 Te 3 based alloys composes of periodically stacked quintuple atomic layers (Te1-Bi-Te2-Bi-Te1) along the c axis, and the adjacent atomic layers are bound with van der Waals force (Figure 1).…”
Section: Introductionmentioning
confidence: 99%