Enhanced power cycling performance of IGBT modules with a reinforced emitter contact

Power Cycling Test Methods for Reliability Assessment of Power Device Modules in Respect to Temperature Stress

“…From the PC test, failure mechanisms of the power device modules due to temperature stress can be studied [18]- [20]. Furthermore, new device packaging materials and designs can be evaluated [17], [21]- [23]. Finally, last but not least, a lifetime model in respect to the temperature stress can be developed based on the PC test results [24]- [26], [91] and it can be used for design for reliability by estimating the lifetime of power device modules under given mission profiles of real converter applications [11], [13], [27]- [30].…”

Power cycling test of transfer molded IGBT modules by advanced power cycler under different junction temperature swings

“…By performing this, failure mechanisms of power modules due to temperature stress can be found and thus a weak point of power modules can be improved [4], [5]. Further, new materials and designs for power module packaging can be evaluated [6]. Finally, a lifetime model in respect to temperature stress can be obtained [7], [8].…”

Study on Effect of Junction Temperature Swing Duration on Lifetime of Transfer Molded Power IGBT Modules

“…Thermomechanical stress is generally the main cause of degradation of IGBT modules [4]- [7]. Therefore, much research has been devoted to the reliability of power IGBT modules in respect to temperature stress such as evaluation of new device packaging materials and designs, failure mechanism analysis, lifetime modeling and estimation [8]- [10].…”