Enhanced planar Hall voltage changes measured in Co/Cu multilayers and Co films with square shapes

Abstract

Enhanced planar Hall voltage changes were measured for a cross-diagonal currentvoltage configuration in [Co (1.2 nm)/Cu (0.7 nm)] 30 multilayers deposited on square 1 cm 2 Si(100) substrates by magnetron sputtering. A ( V /V peak ) = 4000% voltage maximum change is observed with an I ext = 1 mA current flow along one diagonal of the square and the voltage output measured along the other diagonal, for external magnetic fields H ext of ±30 Oe applied in the film plane perpendicular to the edges. This result is discussed in terms of known galvanomagnetic effects in ferromagnetic thin films used in sensors.