Enhanced photoresponse of Cu2O/ZnO heterojunction with piezo-modulated interface engineering

Piezo-phototronic Effect Enhanced UV/Visible Photodetector Based on Fully Wide Band Gap Type-II ZnO/ZnS Core/Shell Nanowire Array

“…[25][26][27][28][29][30] This responsivity value corresponds to an external quantum efficiency (EQE) of about 65% if the internal photoconductive gain is assumed to be one. 31 The high responsivity achieved in the ZnO/ZnS core/shell nanowire array device can mainly be attributed to the abrupt nature of the interface between ZnO and ZnS, which effectively inhibits carrier recombination and facilitates an efficient carrier separation.…”

“…1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 The responsivity for UV (385 nm) excitation source, denoted as R 385nm, with a 0.04 mW/cm 2 illumination density was found to be 0.2 A/W, which is similar to a single crystal ZnS nanobelt UV sensor, 24 and is orders of magnitude higher than similar photodetectors fabricated with a 3D array of nanowires. [25][26][27][28][29][30] This responsivity value corresponds to an external quantum efficiency (EQE) of about 65% if the internal photoconductive gain is assumed to be one. 31 The high responsivity achieved in the ZnO/ZnS core/shell nanowire array device can mainly be attributed to the abrupt nature of the interface between ZnO and ZnS, which effectively inhibits carrier recombination and facilitates an efficient carrier separation.…”

Piezo‐Phototronic Effect for Enhanced Flexible MoS2/WSe2 van der Waals Photodiodes

“…It refers to the use of strain‐induced piezoelectric‐polarization to regulate the generation, transport, separation, and/or the recombination process of photoexcited carriers at Schottky or p–n junction interface for optoelectronics performance modulation . This effect has been successfully demonstrated in wurtzite ZnO and GaN optoelectronics such as light‐emitting diode, solar cells, and photosensors . Precise tunability over junction property is critical to the operation of functional vdWs electronics/optoelectronics.…”

Efficient enhancement of hydrogen production by Ag/Cu2O/ZnO tandem triple-junction photoelectrochemical cell

“…Zinc oxide (ZnO) is also a widely investigated wide bandgap semiconductor for solar water splitting. 17,18 Fabrication of n-ZnO/p-Cu 2 O wide/narrow bandgaps hetero-junction can expand the absorption of large part of the solar light spectrum 4,19 and, importantly, suppress the recombination of carriers. 4 Plasmon enhancement of photocatalytic properties of semiconductors by metal nanostructure is also a useful way to increase the efficiency of PEC cells.…”