“…The results of CIGS photoresponse I-t fitting are shown in Figure 6 and Table 3. Based on the results obtained, the time required to respond to light when the light is on is faster than when the light is off; this is due to the large number of trap states that are formed when the light is off, thereby slowing down the movement of the photogeneration carrier [28], [29]. If the solar cell has a response to light of no more than 2 seconds, then it can be said that the solar cell has optimal performance.…”
Copper Indium Gallium Selenium (CIGS) is a type of solar cell with great potential to be developed to meet increasing energy needs. Electrodeposition is the preferred technique for fabricating CIGS solar cells because it is simple, does not require vacuum equipment, and is low-cost. One factor influencing electrodeposition is the counter electrode, so in this research, CIGS will be fabricated using platinum wire and platinum plate as the counter electrode. Based on the XRD results of CIGS oriented at (112), (211), (220), and (312), the UV-Vis results show that the resulting CIGS has an absorbance peak of 390 nm. CIGS solar cell performance results based on photoresponse produce 0.99 s and 0.45 s when using platinum wire and plate consecutively. Both platinum wire and plate as counter electrodes in electrodeposition can produce CIGS solar cells. However, CIGS with a platinum plate as a counter electrode produces more optimal CIGS performance.
“…The results of CIGS photoresponse I-t fitting are shown in Figure 6 and Table 3. Based on the results obtained, the time required to respond to light when the light is on is faster than when the light is off; this is due to the large number of trap states that are formed when the light is off, thereby slowing down the movement of the photogeneration carrier [28], [29]. If the solar cell has a response to light of no more than 2 seconds, then it can be said that the solar cell has optimal performance.…”
Copper Indium Gallium Selenium (CIGS) is a type of solar cell with great potential to be developed to meet increasing energy needs. Electrodeposition is the preferred technique for fabricating CIGS solar cells because it is simple, does not require vacuum equipment, and is low-cost. One factor influencing electrodeposition is the counter electrode, so in this research, CIGS will be fabricated using platinum wire and platinum plate as the counter electrode. Based on the XRD results of CIGS oriented at (112), (211), (220), and (312), the UV-Vis results show that the resulting CIGS has an absorbance peak of 390 nm. CIGS solar cell performance results based on photoresponse produce 0.99 s and 0.45 s when using platinum wire and plate consecutively. Both platinum wire and plate as counter electrodes in electrodeposition can produce CIGS solar cells. However, CIGS with a platinum plate as a counter electrode produces more optimal CIGS performance.
“…Photoelectric properties of the CZTS-based photocathode . To elucidate the electrochemical charge-transfer kinetics and interface carrier transport mechanism of CZTS-based photocathodes with the introduction of the GCD-layer, we conducted electrochemical impedance spectroscopy (EIS), which is an effective technique to study the polarization resistance ( R P ) of photocathodes by applying sinusoidal AC signals. ,, Figure a shows the Nyquist plots of CZTS, CZTS-8-8-8, CZTS-8-6-6, and CZTS-8-6-4 photocathodes measured under AM 1.5 G simulated solar radiation at 0.2 V RHE . As illustrated, a widely used equivalent circuit model was employed for curve fitting, − consisting of a series resistance ( R S ) and parallel combination of polarization resistance ( R P ) and constant phase element (CPE), which represent the high-frequency capture and semicircle in the Nyquist plots of CZTS photocathodes, respectively.…”
Kesterite Cu 2 ZnSnS 4 -based photocathodes offer promising applications for solar hydrogen evolution due to their nontoxic, cost-effective, and outstanding photoelectrochemical properties. However, the unfavorable band alignment at the CdS/CZTS interface (CBO ≈ 0.5 eV) poses challenges, including high carrier recombination and low minority carrier lifetime, limiting performance enhancement. This study demonstrates that introducing a gradient Cu-deficient interface layer (GCD-layer) significantly reduces the CBO value at the CdS/CZTS interface (to 0.27 eV), improving band alignment and enhancing carrier separation and transport efficiency of the CZTS photocathode. Moreover, the GCD-layer enhances the crystalline quality of the CZTS film and substantially reduces the charge-transfer resistance of the photocathode. Based on these findings, the prepared CZTS-based photocathode achieved an impressive photocurrent density of 24.5 mA•cm −2 (at 0 V RHE ), an onset voltage of 0.75 V RHE , and an ABPE of 4.19% in neutral solution (pH 6.5). Furthermore, the CZTS−BiVO 4 tandem device presented a record unbiased STH of 3.37%.
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