Abstract:As device features continue to shrink, achieving acceptable yields becomes increasingly challenging. In the photolithography process, mask error is one of the most critical error sources, since any imperfections on a mask will be amplified and transferred onto a wafer due to Mask Error Enhancement Factor (MEEF) [1]. Furthermore,due to complexity of lithography optical proximity effect correction in advanced technology nodes, more and more 2D structures are applied into mask patterns. Furthermore, more 2D patte… Show more
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