Enhanced Photocurrents with ZnS Passivated Cu(In,Ga)(Se,S)<sub>2</sub> Photocathodes Synthesized Using a Nonvacuum Process for Solar Water Splitting

Chae, Sang Youn; Park, Se Jin; Han, Sung Gyu; Jung, Hee-Suk; Kim, Chae Woong; Jeong, Chaehwan; Joo, Oh‐Shim; Min, Byoung Koun; Hwang, Yun Jeong

doi:10.1021/jacs.6b09595

Cited by 79 publications

(57 citation statements)

References 53 publications

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“…RHE for previously reported CIGSSe photocathodes. The photocurrent density in the present study is higher than most of the CIGSSe photocathodes fabricated using solution processes and comparable to the most efficient solution-processed CIGSSe photocathodes (Table 1) 12,43,45,46 . The maximum photocurrent density of Pt-PVA/CIGSSe was about 26 mA·cm −2 at −0.16 V vs .…”

Section: Resultssupporting

confidence: 61%

“…RHE) This work CIGSSe/ZnS/PtSpin coating−16−24 (at −0.3 V vs . RHE) 43 Bi:CIS 2 /CdS/ TiO 2 /PtNanoparticle−8−8 (at 0 V vs . RHE) 45 CIGS 2 /CdS/PtSpin coating−6−11 (at ~−0.4 V vs .…”

Section: Resultsmentioning

confidence: 99%

“…In addition, surface sulfurization would passivate mid-gap recombination centers in the space charge region 36,41,42 . We have recently demonstrated that the surface state of CIGSSe can be passivated depending on sulfurization conditions, and thus increase photocurrent density 43 . For comparison ungraded films were prepared by applying the sulfurization process only while Se was being supplied in the chalcogenization process (see details in Supporting Information).…”

Section: Resultsmentioning

confidence: 99%

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A highly efficient Cu(In,Ga)(S,Se)2 photocathode without a hetero-materials overlayer for solar-hydrogen production

Kim

Park

Chae

et al. 2018

Sci Rep

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Surface modification of a Cu(In,Ga)(S,Se)2 (CIGSSe) absorber layer is commonly required to obtain high performance CIGSSe photocathodes. However, surface modifications can cause disadvantages such as optical loss, low stability, the use of toxic substances and an increase in complexity. In this work, we demonstrate that a double-graded bandgap structure (top-high, middle-low and bottom-high bandgaps) can achieve high performance in bare CIGSSe photocathodes without any surface modifications via a hetero-materials overlayer that have been fabricated in a cost-effective solution process. We used two kinds of CIGSSe film produced by different precursor solutions consisting of different solvents and binder materials, and both revealed a double-graded bandgap structure composed of an S-rich top layer, Ga- and S-poor middle layer and S- and Ga-rich bottom layer. The bare CIGSSe photocathode without surface modification exhibited a high photoelectrochemical activity of ~6 mA·cm−2 at 0 V vs. RHE and ~22 mA·cm−2 at −0.27 V vs. RHE, depending on the solution properties used in the CIGSSe film preparation. The incorporation of a Pt catalyst was found to further increase their PEC activity to ~26 mA·cm−2 at −0.16 V vs. RHE.

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Section: Resultssupporting

confidence: 61%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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A highly efficient Cu(In,Ga)(S,Se)2 photocathode without a hetero-materials overlayer for solar-hydrogen production

Kim

Park

Chae

et al. 2018

Sci Rep

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“…Capacitance‐potential measurements also confirm surface passivation via post‐sulfurization, with Se‐rich CIGSSe film exhibiting several peaks resulting from the extra capacitance arising from the presence of surface states (e.g. defects) while these were not present in S‐rich CIGSSe film …”

Section: Resultsmentioning

confidence: 99%

Investigation of Surface Sulfurization in CuIn_1−xGa_xS_2−ySe_y Thin Films by Using Kelvin Probe Force Microscopy

et al. 2018

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CuIn Ga S Se (CIGSSe) thin films have attracted a great deal of attention as promising absorbing materials for solar cell applications, owing to their favorable optical properties (e.g. a direct band gap and high absorption coefficients) and stable structure. Many studies have sought to improve the efficiency of solar cells using these films, and it has been found that surface modification through post-heat treatment can lead to surface passivation of surface defects and a subsequent increase in efficiency. The surface properties of solution-processed CIGSSe films are considered to be particularly important in this respect, owing to the fact that they are more prone to defects. In this work, CIGSSe thin films with differing S/Se ratios at their surface were synthesized by using a precursor solution and post-sulfurization heat treatment. These CIGSSe thin films were investigated with current-voltage and Kelvin probe force microscope (KPFM) analyses. Surface photovoltage (SPV), which is the difference in the work function in the dark and under illumination, was measured by using KPFM, which can examine the screening and the modification of surface charge through carrier trapping. As the concentration of S increases on the CIGSSe film surface, higher work functions and more positive SPV values were observed. Based on these measurements, we inferred the band-bending behavior of CIGSSe absorber films and proposed reasons for the improvement in solar cell performance.

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“…Three different Types of unassisted tandem device configurations are presented in Figure . In Type I and II (Figure a and 14b), the complete cell consists of two absorbers: a photoanode (modified BiVO 4 ) for solar water oxidation and a smaller band‐gap semiconductor (Cu 2 O, Cu(In,Ga)Se 2 and Cu 2 ZnSnS 4 ) as a photocathode for solar water reduction . A conductive metal or graphite as the conductive wire is used in Type I while a transparent conductive membrane is used in Type II as an electron‐hole pair recombination layer.…”

Section: Unbiased Tandem Device Using Bivo4 As Photoanodesmentioning

confidence: 99%

Stepping towards Solar Water Splitting: Recent Progress in Bismuth Vanadate Photoanodes

Luan

Zhang

2019

ChemElectroChem

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Photoelectrochemical (PEC) water splitting is a rational and effective way that imitates natural photosynthesis for direct conversion of solar energy into clean hydrogen fuels. Developing highly efficient photoanodes to enhance the kinetics of the rate‐determining oxygen evolution reaction is generally regarded as the key to achieve artificial photosynthesis. Recently, bismuth vanadate (BiVO4) has emerged as a promising photoanode material for PEC applications. In this Review, recent progress in designing BiVO4‐based photoanodes is presented and summarized, including morphological control, heteroatom/defect doping, hetero‐/homo‐junction fabrication and co‐catalyst deposition. In addition, typical unbiased tandem devices of photoanode/photocathode and photovoltaic/photoanode systems using BiVO4 as the front‐absorber photoanodes are reviewed. Finally, a future outlook is provided to highlight the issues to be addressed for commercial applications of PEC devices for solar water splitting.

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Enhanced Photocurrents with ZnS Passivated Cu(In,Ga)(Se,S)₂ Photocathodes Synthesized Using a Nonvacuum Process for Solar Water Splitting

Cited by 79 publications

References 53 publications

A highly efficient Cu(In,Ga)(S,Se)2 photocathode without a hetero-materials overlayer for solar-hydrogen production

A highly efficient Cu(In,Ga)(S,Se)2 photocathode without a hetero-materials overlayer for solar-hydrogen production

Investigation of Surface Sulfurization in CuIn_1−xGa_xS_2−ySe_y Thin Films by Using Kelvin Probe Force Microscopy

Stepping towards Solar Water Splitting: Recent Progress in Bismuth Vanadate Photoanodes

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Enhanced Photocurrents with ZnS Passivated Cu(In,Ga)(Se,S)2 Photocathodes Synthesized Using a Nonvacuum Process for Solar Water Splitting

Cited by 79 publications

References 53 publications

A highly efficient Cu(In,Ga)(S,Se)2 photocathode without a hetero-materials overlayer for solar-hydrogen production

A highly efficient Cu(In,Ga)(S,Se)2 photocathode without a hetero-materials overlayer for solar-hydrogen production

Investigation of Surface Sulfurization in CuIn1−xGaxS2−ySey Thin Films by Using Kelvin Probe Force Microscopy

Stepping towards Solar Water Splitting: Recent Progress in Bismuth Vanadate Photoanodes

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Product

Resources

About

Enhanced Photocurrents with ZnS Passivated Cu(In,Ga)(Se,S)₂ Photocathodes Synthesized Using a Nonvacuum Process for Solar Water Splitting

Investigation of Surface Sulfurization in CuIn_1−xGa_xS_2−ySe_y Thin Films by Using Kelvin Probe Force Microscopy