2017
DOI: 10.1016/j.apcatb.2016.12.044
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Enhanced photocatalytic properties of lanthanide-TiO2 nanotubes: An experimental and theoretical study

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Cited by 94 publications
(50 citation statements)
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“…The green emission at 546 nm is the dominant one. The findings are in good agreement with the literature [29,60,64,69].…”
Section: Terbiumsupporting
confidence: 92%
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“…The green emission at 546 nm is the dominant one. The findings are in good agreement with the literature [29,60,64,69].…”
Section: Terbiumsupporting
confidence: 92%
“…In the means of energy, doping can alter absorption threshold to lower energies. Incorporation of RE ions into the TiO 2 host modifies the band gap of TiO 2 with sub-band-gap energy levels of RE ions, as illustrated in Figure 7(b) [64,77]. These energy levels offer electronic transition from the TiO 2 valence band to the empty RE ion sub-band-gap energy levels.…”
Section: Tio 2 Nanoparticlesmentioning
confidence: 99%
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“…These methods vary depending on the final structure that is desired, for example, to obtain thin films or coatings, the following methods are more used: Micro-arc oxidation [34], magnetron sputtering [35], spin coating [36] and dip coating [37]. To prepare powders with defined nanostructures are electrospinning (nanofibers) [38], anodization (nanotubes) [39], microemulsion (spheres) [40], hydrothermal (nanowires) [41], state solid reaction (amorphous) [42], impregnation (amorphous) [43], and sol-gel (different structures) [44]. All of them can be modified, combined with each other or coupled to different energy sources, such as microwaves [45] and ultrasounds [46], to create doped materials with unique photocatalytic properties.…”
Section: Methods Of Synthesis Of Tio 2 -Rementioning
confidence: 99%
“…N, S, B, F, I), (iii) reduced form of TiO2-x, or (iv) doping with semiconductors, which have lower band gap energy. Recently, researchers provide potentials for TiO2 photocatalysts modified lanthanides, for example holmium atom [1]. The modified titanium dioxide nanomaterial can form the basis for the new generation semiconductor.…”
Section: Extended Abstractmentioning
confidence: 99%