2011
DOI: 10.1111/j.1551-2916.2011.04479.x
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Enhanced Photocatalytic Activity in β‐Ga2O3 Nanobelts

Abstract: b-Ga 2 O 3 nanobelts have been synthesized by a vapor transport process under different ambient oxygen. Their structural and optical properties were characterized by field-emission scanning electron microscopy, X-ray diffraction, photoluminescence (PL), and absorbance measurements. Structural characterization revealed that the as-synthesized samples consist of monoclinic b-Ga 2 O 3 nanobelts with comparable surface area. Samples prepared under high oxygen ambient possessed large numbers of gallium-associated d… Show more

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Cited by 65 publications
(40 citation statements)
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“…7f) by using β-Ga 2 O 3 microspheres comprised of nanospheres as the catalyst as also suggested by Li-Chia Ten et.al 42. Therefore, the presence of both 20 illumination and the β-Ga 2 O 3 catalysts were necessary for the efficient degradation of RhB and MB.…”
mentioning
confidence: 67%
“…7f) by using β-Ga 2 O 3 microspheres comprised of nanospheres as the catalyst as also suggested by Li-Chia Ten et.al 42. Therefore, the presence of both 20 illumination and the β-Ga 2 O 3 catalysts were necessary for the efficient degradation of RhB and MB.…”
mentioning
confidence: 67%
“…The emission peak centered at 357 nm by Gaussian fitting is in the UV region, which is an intrinsic transition and attributed to the recombination of the self-trapped excitons [22]. The green and blue emission peaks originate from the recombination of an electron on a donor due to the oxygen vacancies (V O ) and a hole on an acceptor caused by the gallium vacancies (V Ga ) or the gallium-oxygen vacancy pairs (V Ga -V O ) [21,23]. Therefore, the blue emission peak centered at 420 nm by Gaussian fitting is excited with the photon energy slightly below the band gap of b-Ga 2 O 3 , which is generated by the recombination of the donor bands (V O ) close to the valence bands and the acceptor bands consisting of the galliumoxygen vacancy pairs (V Ga -V O ).…”
Section: Resultsmentioning
confidence: 99%
“…If surface defect states exist, it may be able to trap the electron or hole, the recombination is prevented and the rate of oxidation-reduction reactions may be increased. The photocatalytic activity is known to be dependent on the crystallinity, surface area and morphology and it may be improved by slowing the recombination of photogenerated electron-hole pairs, extending the excitation wavelength to lower energy range, and increasing the amount of surface-adsorbed reactant species [3,13,31,32]. Thus the enhanced photocatalytic activates of b-Ga 2 O 3 NWs may be ascribed to the significant surface related defects originating from the high surface to volume ratio [13].…”
Section: Photocatalytic Activitiesmentioning
confidence: 97%
“…1D b-Ga 2 O 3 exhibits unusual optical, photocatalytic, electronic and mechanical properties as compared to those of bulk materials, due to the significant surface related defects originating from the high surface to volume ratios. In addition, some important advantages such as good high temperature stability, oxidation resistance and stable electric properties, demonstrate their potential basic building blocks for new classes of environmentally conscious electronics [12,13].…”
Section: Introductionmentioning
confidence: 99%
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