Enhanced performance of silicon solar cells by application of low-cost sol–gel-derived Al-rich ZnO film

Khan, Firoz; Baek, Seong‐Ho; Mobin, Abdul; Kim, Jae Hyun

doi:10.1016/j.solener.2013.12.025

Cited by 27 publications

(5 citation statements)

References 25 publications

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“…These films have been used as ARCs on the front surface and passivating layers on the back surface of bifacial solar cells [16]. Furthermore, these ZnO:Al films have been applied as passivating and capping layers on the p-back surface of passivated emitter and rear cell (PERC) solar cells with local Al back surface fields (BSFs) [17].…”

Section: Introductionmentioning

confidence: 99%

Passivation analysis of silicon surfaces via sol—gel derived Al-rich ZnO film

Khan¹,

Baek²,

Kim³

2014

Semicond. Sci. Technol.

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Electronic recombination losses can be reduced via passivation of silicon surfaces. Most techniques available in the literature are either not cost effective or not applicable for solar cell applications. We investigate low cost sol-gel derived Al-rich zinc oxide (ZnO:Al) film and its effective passivation of p-type silicon surfaces. Herein, we present the elemental composition of the film and interfacial structure of ZnO:Al/Si using FTIR, XPS, TEM, and SIMS characterizations. ZnO:Al is polycrystalline and contains some very small amorphous regions of Al 2 O 3 .

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Section: Introductionmentioning

confidence: 99%

Passivation analysis of silicon surfaces via sol—gel derived Al-rich ZnO film

Khan¹,

Baek²,

Kim³

2014

Semicond. Sci. Technol.

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“…In addition, the textured front side suffers from reflection, and an ARC allows the reduction of light reflection; therefore, depositing the ARC layer on the emitter is necessary. SiN x has a proper refractive index and is an ideal material as the ARC layer in PERC cells to reduce optical losses and raise J sc , which is usually deposited by the plasma-enhanced chemical vapor deposition (PECVD) method (Figure b). − As for the front contact, the material typically is silver, and the contact can be formed by screen printing …”

Section: Different Structures Of Si Solar Cells and Perovskite/si Tan...mentioning

confidence: 99%

Perovskite/Silicon Tandem Solar Cells: Choice of Bottom Devices and Recombination Layers

et al. 2023

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Perovskite/silicon tandem solar cells have been intensively studied in recent years, and their efficiencies have rapidly increased owing to the numerous efforts in this field. A question about which type of silicon solar cell is the most suitable subcell in tandem devices emerges. Herein, three attractive silicon solar cells are summarized, including passivated-emitter rear-cell (PERC), tunnel oxide passivated contact (TOPCon), and heterojunction (HJT) cells. Their structures and features are elucidated for a clear understanding of the mechanism and potential of optimum performance. Moreover, the characteristics and performance of perovskite/silicon tandem cells with PERC, TOPCon, and HJT subcells are contrasted and discussed. The significant contribution of the passivation layer and structure design on both sides to photovoltaic properties of tandem devices is emphasized. Especially, the recombination layer between two subcells is analyzed in depth in terms of material chemistry, light absorption, and charge transport with a review on preparing the optimized structure.

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“…2,4 These films also have been used as passivating layers on the back surface of bifacial solar cells, 5 and for passivated emitter and rear cells (PERCs). 6 Previously, the Al content in the ZnO:Al film has been optimized, 7 and the interface properties between the passivating layer and p-Si also have been studied. 8 However, ZnO:Al does not effectively passivate n-type silicon (n-Si).…”

Section: Introductionmentioning

confidence: 99%

Investigation of the surface passivation mechanism through an Ag-doped Al-rich film using a solution process

2016

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Electronic recombination loss is an important issue for photovoltaic (PV) devices. While it can be reduced by using a passivating layer, most of the techniques used to prepare passivating layers are either not cost effective or not applicable for device applications. Previously, it was reported that a low cost sol-gel derived Al-rich zinc oxide (ZnO:Al) film serves as an effective passivating layer for p-type silicon but is not effective for n-type silicon. Herein, we studied the elemental composition of the film and the interfacial structure of ZnO:Al:Ag/n-Si using TEM, XPS, FTIR, and SIMS analyses. The XPS analysis revealed that Ag-rich zones randomly formed in the film near the ZnO:Al:Ag//n-Si interface, which induced a positive charge at the interface. The maximal value of the effective minority carrier lifetime (τeff ≈ 1581 μs) is obtained for a wafer using the ZnO:Al:Ag passivating layer with RAg/Zn = 2%. The corresponding limiting surface recombination velocity is ∼16 cm s(-1). The FTIR absorption area of Si-H bonds is used to calculate the hydrogen content in the film. The hydrogen content is increased with increasing Ag content up to RAg/Zn = 2% to a maximal value of 3.89 × 10(22) atoms per cm(3) from 3.03 × 10(22) atoms per cm(3) for RAg/Zn = 0%. The positive charge induced at the interface may cause band bending, which would produce an electric field that repels the minority charge carriers from the interface to the bulk of n-Si. Two basic phenomena, chemical passivation due to Si-H bonding and field effect passivation due to the charge induced at the interface, have been observed for effective passivation of the n-Si surface. An implied Voc of 688.1 mV is obtained at an illumination intensity of 1 sun.

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Enhanced performance of silicon solar cells by application of low-cost sol–gel-derived Al-rich ZnO film

Cited by 27 publications

References 25 publications

Passivation analysis of silicon surfaces via sol—gel derived Al-rich ZnO film

Passivation analysis of silicon surfaces via sol—gel derived Al-rich ZnO film

Perovskite/Silicon Tandem Solar Cells: Choice of Bottom Devices and Recombination Layers

Investigation of the surface passivation mechanism through an Ag-doped Al-rich film using a solution process

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