Oxide ion conductors are technologically important materials because of their potential applications in oxygen sensors and pumps, as dense membranes for oxygen permeation, catalysts, and as electrolytes for solid oxide fuel cells (SOFCs). [1][2][3][4] To be efficient in various applications, candidate materials should possess a conductivity of at least 10 À2 S cm À1 at deviceoperating temperatures; currently commercially used yttriastabilized zirconia (YSZ) reaches this target at 700 8C.[1]Given the drive towards lowering device-operating temperatures, there is a strong impetus and a great challenge for materials chemists to develop materials with enhanced ionic mobility and superior low-temperature oxide ion conductivity. [5,6] A better understanding of generic structural features and pathways which facilitate ionic mobility at lower temperature is a key step in reaching this goal.Here we report a remarkably high oxide ion conductivity at low temperatures (300-500 8C) in an ordered pseudo-cubic 3 3 3 [8,9] By contrast and unusually, our materials crystallize as stable ordered superstructures, and do not undergo phase transitions to lower symmetry and lower conductivity polymorphs. Our ab initio molecular dynamics (AIMD) simulations reveal the structural features and mechanisms which facilitate the high oxide ion mobility at low temperatures, and provide conceptual insight readily applicable to other materials and structure types.The high-temperature cubic fluorite-type bismuth oxide, d-Bi 2 O 3 , with intrinsic oxygen vacancies, shows the highest oxide ion conductivity measured in any material (around 1 Scm À1 at 750 8C); [10] however, it is only thermodynamically stable in the narrow range between 730 and 824 8C.[11] There has been considerable interest in stabilizing the highly conducting d-Bi 2 O 3 phase by isovalent or aliovalent cation substitution to preserve oxide ion conductivity at lower temperatures. For example, 20 % substitution of Er into Bi 2 O 3 results in oxide ion conductivity of 2 10 À2 S cm À1 at 500 8C and 0.4 S cm À1 at 700 8C.[12] Double cation substitution has yielded even higher conductivities at low temperatures (300-500 8C); the best examples include Dy-W, [13] Pr-V, [7] and the recently reported La-Re [8] À3 -10 À2 S cm À1 at 300-400 8C, approaching the Cu-doped layered Bi 2 VO 5.5 (BICUVOX), which itself has the disadvantage of two-dimensional, anisotropic conductivity. Although the relative chemical instability of Bi oxides under reducing conditions has so far hampered their applications in SOFCs, the use of bilayer electrolytes can overcome this issue. [14] In addition to high oxide ion conductivity, bismuthbased oxides show electrocatalytic activity and therefore also have great potential for applications in electrochemical oxygen separation. [15,16] A common structural feature in the best d-Bi 2 O 3 -based oxide ion conductors reported so far is that doping stabilizes simple cubic structures with a % 5.5 and space group Fm " 3m. [7][8]13] By comparison, doped d-Bi 2 O 3 material...