2007
DOI: 10.1002/chin.200711008
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Enhanced Oxide Ion Conductivity in Stabilized δ‐Bi2O3.

Abstract: Enhanced Oxide Ion Conductivity in Stabilized δ-Bi2O3. -Bi12.5Ln1.5O24.5 (Ln: La, Nd, Eu, Er, Y) materials are synthesized by reaction of stoichiometric amounts of Bi2O3, Ln2O3, and NH4ReO4 (Bi:Ln:Re = 12.5:1.5:1; air, 800°C, 36 h). The samples are characterized by powder XRD and conductivity measurements. Ln-and Re-doped δ-Bi2O3 materials exhibit low-temperature (<400°C) oxide ion conductivities that are significantly higher than previously reported for δ-Bi2O3 phases and are comparable to those of BIMEVOX (e… Show more

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Cited by 8 publications
(8 citation statements)
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“…Bismuth oxides and various substituted derivatives have been mined as a rich compositional space within which to find new fast ion conductors, sparked by the extremely high oxygen ionic conductivity values of the cubic δ phase of Bi 2 O 3 , which is not stable at lower temperatures due to transformation to a monoclinic polymorph below 1003 K. 5,6 Of the families of materials that have been explored, including phases resulting from isovalent doping (rare earth Ln 3+ ) [7][8][9][10][11][12] as well as aliovalent doping (such as pentavalent P, V, Nb, and/or Ta), [13][14][15][16][17][18][19][20][21][22] vanadium-substituted bismuth oxides have shown the most promising values of ionic conductivity at relatively lower temperatures. 23,24 These materials often exhibit complex superstructures; understanding the role the V dopant plays in enabling the superionic behaviour of the Bi-O lattice is correspondingly complex, but is nonetheless necessary in elucidating the best way to optimise these materials for device applications.…”
Section: Introductionmentioning
confidence: 99%
“…Bismuth oxides and various substituted derivatives have been mined as a rich compositional space within which to find new fast ion conductors, sparked by the extremely high oxygen ionic conductivity values of the cubic δ phase of Bi 2 O 3 , which is not stable at lower temperatures due to transformation to a monoclinic polymorph below 1003 K. 5,6 Of the families of materials that have been explored, including phases resulting from isovalent doping (rare earth Ln 3+ ) [7][8][9][10][11][12] as well as aliovalent doping (such as pentavalent P, V, Nb, and/or Ta), [13][14][15][16][17][18][19][20][21][22] vanadium-substituted bismuth oxides have shown the most promising values of ionic conductivity at relatively lower temperatures. 23,24 These materials often exhibit complex superstructures; understanding the role the V dopant plays in enabling the superionic behaviour of the Bi-O lattice is correspondingly complex, but is nonetheless necessary in elucidating the best way to optimise these materials for device applications.…”
Section: Introductionmentioning
confidence: 99%
“…Introducing small amount of sintering aids to GDC is one effective way to lower its sintering temperature. Bismuth oxide is the preferred dopant for GDC due to its low binding energy of Bi-O bond with only 102.5 kJ mol À1 [14] and low melting point of 821 C [15]. Gil et al [16][17][18] found that the sintering temperature of GDC was reduced by about 250-300 C with the addition of Bi 2 O 3 .…”
Section: Introductionmentioning
confidence: 98%
“…This suggests that bismuth oxide addition may also induce non-ohmic behavior in indium oxide ceramics. Moreover, some bismuth oxide phases in such ceramics can have ionic conduction with oxygen ion as a carrier [25][26][27] this can be favourable for the manifestation of the current limiting mechanism proposed by Bondarchuk et al [12].…”
Section: Introductionmentioning
confidence: 98%