2008 34th European Conference on Optical Communication 2008
DOI: 10.1109/ecoc.2008.4729244
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Enhanced nonlinearity in SOI microcavities by III–V/SOI heterogeneous integration

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Cited by 2 publications
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“…Alternatively, one can integrate an active region over the entire ring, using optical pumping to generate gain [143,184] The same type of integration can be used to make an integrated III-V photodetector [13]. As the detector is embedded in the ring resonator, it will only respond to the ring resonant frequencies [143,184,185]. However, the loss introduced by the detector should be sufficiently small not to quench the ring resonance too much.…”
Section: Hybrid Silicon Ringsmentioning
confidence: 99%
“…Alternatively, one can integrate an active region over the entire ring, using optical pumping to generate gain [143,184] The same type of integration can be used to make an integrated III-V photodetector [13]. As the detector is embedded in the ring resonator, it will only respond to the ring resonant frequencies [143,184,185]. However, the loss introduced by the detector should be sufficiently small not to quench the ring resonance too much.…”
Section: Hybrid Silicon Ringsmentioning
confidence: 99%
“…1a. The layer transfer of III-V on a SOI PIC has been used to demonstrate electrically pumped lasers [3] , wavelength conversion [7] , integrated photodetectors [8] and all-optical modulation [9] . The same concept of evanescent coupling has also been applied to demonstrate an optical isolator on SOI by bonding an yttrium iron garnet Y 3 Fe 5 O 3 (YIG) magnetooptic garnet on top of a Mach-Zehnder interferometer [10] .…”
Section: Introductionmentioning
confidence: 99%