Enhanced near-room temperature thermoelectric performance and mechanical strength of n-type BiTeSe materials incorporated with Ag<sub>2</sub>Se inclusions

Chen, Ke; Chen, Tao; Ai, Li; Ming, Hongwei; Shu, Jin Li; Zhang, Jian; Qin, Xiaoying; Xin, Haohui; Song, Caixia; Li, Di

doi:10.1039/d3qi00972f

Cited by 5 publications

(1 citation statement)

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“…Sui et al obtained a maximum ZT of 1.1 (373 K) for Bi 2 Te 2.9 S 0.1 (TeI 4 ) 0.0012 by a novel approach of S/Te/I point defect reconfiguration in n-type Bi 2 Te 3 alloy. Li et al fabricated a Bi 2 Te 2.5 Se 0.5 matrix dispersed with Ag 2 Se nanoparticles and got a maximum ZT = 1.12 (345 K) for the BTS-0.15 vol % Ag 2 Se sample.…”

Section: Introductionmentioning

confidence: 99%

Enhancing Thermoelectric Performance of n-Type Bi₂Te_2.7Se_0.3 through Incorporation of Amorphous Si₃N₄ Nanoparticles

Chen,

Li,

Chen

et al. 2024

ACS Appl. Mater. Interfaces

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Bi 2 Te 3 -based thermoelectric (TE) materials are the state-of-the-art compounds for commercial applications near room temperature. Nevertheless, the application of the n-type Bi 2 Te 2.7 Se 0.3 (BTS) is restricted by the comparatively low figure of merit (ZT) and intrinsic embrittlement. Here, we show that through dispersion of amorphous Si 3 N 4 (a-Si 3 N 4 ) nanoparticles both 14% increase in power factor (at 300 K) and 48% decrease in lattice thermal conductivity are simultaneously realized. The increased power factor comes from enhanced thermopower and reduced electrical resistivity while the reduced lattice thermal conductivity originates mainly from scattering of middle-and low-frequency phonons at the incorporated a-Si 3 N 4 nanoparticles. As a result, a large ZT max = 1.19 (at 373 K) and an average ZT ave ∼ 1.12 (300−473 K) with better mechanical properties are achieved for the BTS/0.25 wt % Si 3 N 4 sample. Present results demonstrate that the incorporation of a-Si 3 N 4 is a promising way to improve TE performance.

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Section: Introductionmentioning

confidence: 99%

Enhancing Thermoelectric Performance of n-Type Bi₂Te_2.7Se_0.3 through Incorporation of Amorphous Si₃N₄ Nanoparticles

Chen,

Li,

Chen

et al. 2024

ACS Appl. Mater. Interfaces

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High Thermoelectric Performance in Bismuth Telluride via Constructing MoSe₂‐2D Heterojunction

Xiong,

He,

Tian

et al. 2024

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Currently, the only thermoelectric (TE) materials commercially available at room temperature are those based on bismuth telluride. However, their widespread application is limited due to their inferior thermoelectric and mechanical properties. In this study, a strategy of growing a rigid second phase of MoSe2 is employed, in situ within the matrix phase to achieve n‐type bismuth telluride‐based materials with exceptional mechanical and thermoelectric properties. The in situ grown second phase contributes to both the electronic and lattice thermal conductivities. This is primarily attributed to the strong energy filtering effect, as the second phase forms a semi‐common lattice interfacial structure with the matrix phase during growth. Furthermore, for composites containing 2 wt% MoSe2, a maximum zT value of 1.24 at 373 K can be achieved. On this basis, 8‐pair TE module is fabricated and 1‐pair TE module is optimized using a homemade p‐type material. The optimized 1‐pair TE module generates a maximum output power of 13.6 µW, which is twice that of the 8‐pair TE module and four times more than the 8‐pair TE module fabricated by commercial material. This work facilitates the development of the TE module by presenting a novel approach to obtaining bismuth telluride‐based thermoelectric materials with superior thermoelectric and mechanical properties.

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Investigation into thermoelectric performance of a flexible n-type nanocomposite film from the AgxSe nanotube composited with PPy

Chen,

Gao,

et al. 2024

Journal of Alloys and Compounds

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Enhanced near-room temperature thermoelectric performance and mechanical strength of n-type BiTeSe materials incorporated with Ag₂Se inclusions

Abstract: Bi2Te3-based alloys are the best thermoelectric materials near room temperature. However, the lower thermoelectric (TE) performance of n-type Bi2Te3-based materials compared to their p-type one seriously limits the conversion efficiency...

Cited by 5 publications

References 49 publications

Enhancing Thermoelectric Performance of n-Type Bi₂Te_2.7Se_0.3 through Incorporation of Amorphous Si₃N₄ Nanoparticles

Enhancing Thermoelectric Performance of n-Type Bi₂Te_2.7Se_0.3 through Incorporation of Amorphous Si₃N₄ Nanoparticles

High Thermoelectric Performance in Bismuth Telluride via Constructing MoSe₂‐2D Heterojunction

Investigation into thermoelectric performance of a flexible n-type nanocomposite film from the AgxSe nanotube composited with PPy

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Enhanced near-room temperature thermoelectric performance and mechanical strength of n-type BiTeSe materials incorporated with Ag2Se inclusions

Abstract: Bi2Te3-based alloys are the best thermoelectric materials near room temperature. However, the lower thermoelectric (TE) performance of n-type Bi2Te3-based materials compared to their p-type one seriously limits the conversion efficiency...

Cited by 5 publications

References 49 publications

Enhancing Thermoelectric Performance of n-Type Bi2Te2.7Se0.3 through Incorporation of Amorphous Si3N4 Nanoparticles

Enhancing Thermoelectric Performance of n-Type Bi2Te2.7Se0.3 through Incorporation of Amorphous Si3N4 Nanoparticles

High Thermoelectric Performance in Bismuth Telluride via Constructing MoSe2‐2D Heterojunction

Investigation into thermoelectric performance of a flexible n-type nanocomposite film from the AgxSe nanotube composited with PPy

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Enhanced near-room temperature thermoelectric performance and mechanical strength of n-type BiTeSe materials incorporated with Ag₂Se inclusions

Enhancing Thermoelectric Performance of n-Type Bi₂Te_2.7Se_0.3 through Incorporation of Amorphous Si₃N₄ Nanoparticles

Enhancing Thermoelectric Performance of n-Type Bi₂Te_2.7Se_0.3 through Incorporation of Amorphous Si₃N₄ Nanoparticles

High Thermoelectric Performance in Bismuth Telluride via Constructing MoSe₂‐2D Heterojunction