In this article, we study
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f
γ
,
γ
≈
1
electrical noise in amorphous phase-change materials. Given the relevance of noise in recent applications, it is necessary to gain a deeper perspective on its nature in phase-change semiconductors, a promising class of materials. Electron conduction is envisaged in terms of an envelope function and a field-dependent Bloch wave function; the electron transport across the structure is modeled as driven phase oscillators under a weak field and obeys a Kuramoto-type equation. Its solutions naturally divide into a phase-synchronized group and phase-desynchronized oscillators. The former is comprised by long-lived pairs or aggregates and are responsible for
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f
,
γ
=
1
noise. We identify the dividing frequency between
γ
=
1
noise and
γ
≠
1
noise. The phase-desynchronized carriers generate
γ
≠
1
noise and are single carriers, not aggregates, and are short-lived. We apply our analysis to recent experiments.