Enhanced magneto-optical oscillations from two-dimensional hole-gases in the presence of Mn ions

Gazoto, A. L.; Brasil, M. J. S. P.; Iikawa, F.; Brum, José M.; Ribeiro, E.; Danilov, Yu. A.; Vikhrova, O. V.; Звонков, Б. Н.

doi:10.1063/1.3601477

Cited by 6 publications

(31 citation statements)

References 16 publications

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“…For the reference sample, a C delta-doping layer was included on the back GaAs barrier at 10 nm from the QW in order to obtain a similar holeconcentration from those of the Mn doped samples. 5 Furthermore, all samples present very similar PL line widths (ranging between 5 to 9 meV), which indicates similar QW interface roughness degrees. The observation of sharp features solely for samples where there are Mn ions nearby the QW states is therefore quite surprising.…”

Section: Resultsmentioning

confidence: 84%

“…The dimensionality of the system plays a significant role in the coupling between the electronic states and the magnetic ion. 4,5 Much attention has been devoted to the GaAs:Mn system, where substitutional Mn acts as an acceptor as well as a magnetic impurity, an especially attractive material with high optical quality. 6 In particular, structures based on GaAs structures with Mn delta-doped layers have been proposed as an alternative to attain high Mn concentrations, in order to achieve the ferromagnetic phase at higher critical temperatures.…”

Section: Introductionmentioning

confidence: 99%

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Effects of a nearby Mn delta layer on the optical properties of an InGaAs/GaAs quantum well

Balanta

Brasil

Iikawa

et al. 2014

Journal of Applied Physics

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We investigated the effects of nearby Mn ions on the confined states of a InGaAs/GaAs quantum well through circularly polarized and magneto-optical measurements. The addition of a Mn deltadoping layer at the barrier close to the well gives rise to surprisingly narrow absorption peaks in the photoluminescence excitation spectra. The peaks become increasingly stronger for decreasing spacer-layer thicknesses between the quantum well and the Mn layer. Most of the peaks were identified based on self-consistent calculations; however, we observed additional peaks that cannot be identified with quantum well transitions, which origin we attribute to an enhanced exciton-phonon coupling. Finally, we discuss possible effects related to the exciton magneto-polaron complex in the reinforcement of the photoluminescence excitation peaks. V

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Section: Resultsmentioning

confidence: 84%

Section: Introductionmentioning

confidence: 99%

Effects of a nearby Mn delta layer on the optical properties of an InGaAs/GaAs quantum well

Balanta

Brasil

Iikawa

et al. 2014

Journal of Applied Physics

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“…Quantum well (QW) structures with a Mn delta-doped (Mn) layer at the barrier were proposed as a solution to preserve the optical properties of the QW confined carriers without destroying their interaction with the magnetic ions [10,11]. In spite of the reduced overlap, it was demonstrated that the spin interaction survives on a structure consisting of an InGaAs/GaAs QW with a Mn at the GaAs barrier [12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Optically controlled spin-polarization memory effect on Mn delta-doped heterostructures

Balanta

Brasil

Iikawa

et al. 2016

Sci Rep

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We investigated the dynamics of the interaction between spin-polarized photo-created carriers and Mn ions on InGaAs/GaAs: Mn structures. The carriers are confined in an InGaAs quantum well and the Mn ions come from a Mn delta-layer grown at the GaAs barrier close to the well. Even though the carriers and the Mn ions are spatially separated, the interaction between them is demonstrated by time-resolved spin-polarized photoluminescence measurements. Using a pre-pulse laser excitation with an opposite circular-polarization clearly reduces the polarization degree of the quantum-well emission for samples where a strong magnetic interaction is observed. The results demonstrate that the Mn ions act as a spin-memory that can be optically controlled by the polarization of the photocreated carriers. On the other hand, the spin-polarized Mn ions also affect the spin-polarization of the subsequently created carriers as observed by their spin relaxation time. These effects fade away with increasing time delays between the pulses as well as with increasing temperatures.

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“…20 The properties of CdTe quantum dots with magnetic impurities have been extensively investigated theoretically, 1,18,[21][22][23][24][25][26][27][28][29] including the theory of Coulomb blockade and capacitance spectroscopy, 21,24,30 cyclotron resonance, 27 and photoluminescence (PL). 18,22,26,31,32 The optical properties of carriers confined in III-V quantum wells 33 and quantum dots 15 containing Mn ions have also been investigated.…”

Section: Introductionmentioning

confidence: 99%

Optical properties of charged quantum dots doped with a single magnetic impurity

et al. 2013

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We present a microscopic theory of the optical properties of self-assembled quantum dots doped with a single magnetic manganese (Mn) impurity and containing a controlled number of electrons. The single-particle electron and heavy-hole electronic shells are described by two-dimensional harmonic oscillators. The electron-electron, electron-hole Coulomb as well as the short-range electron spin-Mn spin and hole spin-Mn spin contact exchange interactions are included. The electronic states of the photo-excited electron-hole-Mn complex and of the final electron-Mn complex are expanded in a finite number of configurations and the full interacting Hamiltonian is diagonalized numerically. The emission spectrum is predicted as a function of photon energy for a given number of electrons and different number of confined electronic quantum dot shells. We show how emission spectra allow to identify the number of electronic shells, the number of electrons populating these shells and, most importantly, their spin. We show that electrons not interacting directly with the spin of Mn ion do so via electron-electron interactions. This indirect interaction is a strong effect even when Mn impurity is away from the quantum dot center. arXiv:1309.0283v2 [cond-mat.mes-hall]

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Enhanced magneto-optical oscillations from two-dimensional hole-gases in the presence of Mn ions

Cited by 6 publications

References 16 publications

Effects of a nearby Mn delta layer on the optical properties of an InGaAs/GaAs quantum well

Effects of a nearby Mn delta layer on the optical properties of an InGaAs/GaAs quantum well

Optically controlled spin-polarization memory effect on Mn delta-doped heterostructures

Optical properties of charged quantum dots doped with a single magnetic impurity

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