2022
DOI: 10.1016/j.physe.2022.115306
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Enhanced magnetic, dielectric and photoconductive properties of Zr doped BiFeO3 nanostructures

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Cited by 8 publications
(3 citation statements)
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“…At a dopant concentration of 2.5% Zr with a particle size of 46 nm, the dielectric constant was found to be 366 at RT/10 3 Hz. The observed increase in the dielectric constant can be attributed to the reduction of Fe 3+ ions and an increase in O 2 vacancies [ 101 ]. Tuning the dielectric properties has been reported through doping BFO with Ni.…”
Section: Bismuth Ferritementioning
confidence: 99%
“…At a dopant concentration of 2.5% Zr with a particle size of 46 nm, the dielectric constant was found to be 366 at RT/10 3 Hz. The observed increase in the dielectric constant can be attributed to the reduction of Fe 3+ ions and an increase in O 2 vacancies [ 101 ]. Tuning the dielectric properties has been reported through doping BFO with Ni.…”
Section: Bismuth Ferritementioning
confidence: 99%
“…As a composite metal oxide of iron and bismuth, Bi 2 Fe 4 O 9 is widely used in various elds due to its suitable band gap (about 2.1eV) [9] . Currently, it is widely used in photocatalytic hydrogen production [10] , battery [11] , photocatalyst [12] , photodetector [13] , etc. The structure of Bi 2 Fe 4 O 9 has been tested in detail by various methods [14][15] .…”
Section: Introductionmentioning
confidence: 99%
“…Similarly, Nd-doped BiFeO 3 thin films for random access memory applications were successfully grown [ 24 ]. Kathirvel et al [ 25 ] reported that Zr doped in Fe site BiFeO 3 thin films had enhanced magnetic properties. Liu et al reported multi-element (La, Er, Zn, Ti) doping of BiFeO 3 thin films, resulting in reduced leakage current and improved ferroelectric properties [ 26 ].…”
Section: Introductionmentioning
confidence: 99%