Enhanced luminescence of erbium doped Ga2O3 films and devices by optimizing annealing process

Pang, Houwei; Fan, Yuxuan; Wang, Yuan; Wu, Yunfeng; Li, Dongsheng; Yang, Deren

doi:10.1016/j.mssp.2023.108029

Cited by 3 publications

(6 citation statements)

References 29 publications

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“…Characteristic emissions at ∼1.54 µm from the transition between 4 I 13/2 and 4 I 15/2 states of excited Er 3+ ions are detected, where weak shoulder peaks appear at ∼1.55 µm ascribed to the Stark splitting [17], these PL features further prove that the incorporated Er is active. As the annealing temperature and time increase, the enhanced PL intensity is owing to the optimized crystalline quality for the film, which is beneficial to improve the optical activity with Er 3+ ions thereby raising its transition probability [27].…”

Section: Resultsmentioning

confidence: 99%

“…The J-V curves based on the FTO:Er/Si film devices illustrated in figure 5(a), the electrical conductivity of the devices downgrades with the rising annealing temperature and time on the films, on account of the oxygen vacancy loss and SiO x interlayer thickening. Nevertheless, improving the crystalline quality of the FTO film with thermal treatment can increase the optical activity of Er 3+ ions [27], as well as weaken the scattering effect for hot electrons through decreasing the defect concentration, especially at the grain boundary [35,36]. Thus, the EL performance can be further optimized via heat treatment.…”

Section: Resultsmentioning

confidence: 99%

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Realization of 1.54 μm electroluminescence via silicon-based erbium-doped SnO₂ film devices

Wu,

Pang,

Wang

et al. 2024

J. Phys. D: Appl. Phys.

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1.54 μm telecom-wavelength electroluminescence is achieved by erbium-doped SnO2 film devices fabricated on silicon wafers. Employing fluorine as a co-dopant, the electroluminescence intensity is increased due to enhanced electrical injection of the device and improved optical activity of the erbium ions. The realization of electroluminescence can be ascribed to the inelastic impact with erbium ions through the hot electrons originating from different electrical conduction mechanisms, by controlling the SiOx interlayer thickness. Herein, the device based on the co-doped film presents a low turn-on voltage of 4.4 V. Via further regulating the annealing condition, the co-doped device obtains a maximum optical power density of 92.2 μW/cm2 at 1.55 μm, with an operating lifetime of more than 190 h in the atmosphere. This work clarifies the broad application prospects for SnO2 devices in silicon photonics technology.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Realization of 1.54 μm electroluminescence via silicon-based erbium-doped SnO₂ film devices

Wu,

Pang,

Wang

et al. 2024

J. Phys. D: Appl. Phys.

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“…The fabrication process has been reported elsewhere [16,17]. The Ga 2 O 3 :Er films were deposited on p-Si substrates with a crystal orientation of <100> and the resistivity of ∼0.01 Ω•cm via radio-frequency sputtering technology, using a ceramic Ga 2 O 3 target doped with 2 at% Er.…”

Section: Methodsmentioning

confidence: 99%

“…Nevertheless, the intensity of such emission is limited by the relatively low concentration of V O in native Ga 2 O 3 (∼10 15 -10 16 cm −3 ), which is quite challenging to use directly as a light-emitting device (LED). Alternatively, if coexisting with other highly efficient activators with appropriate emission energy, V O may sensitize the activators, applying Ga 2 O 3 to LED indirectly [15][16][17].…”

Section: Introductionmentioning

confidence: 99%

“…Therefore, the influence of V O in Ga 2 O 3 :Er films and devices are crucial for clarifying the working mechanisms and optimizing the performances. We have proven previously that the ∼500 nm recombination related to V O in Ga 2 O 3 can sensitize Er 3+ ions nearby [16], and the luminescence intensity can be enhanced by optimizing the annealing process [17]. However, the analysis focused on V O has been neglected.…”

Section: Introductionmentioning

confidence: 99%

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Effects of oxygen vacancies on the optical and electrical performances of silicon-based Er doped Ga₂O₃ films

Pang,

Wang,

et al. 2024

J. Phys. D: Appl. Phys.

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Effects of oxygen vacancies on the optical and electrical properties of silicon-based Er doped Ga2O3 films are investigated. The content of oxygen vacancies can be tuned by changing the Ar:O2 flow ratios during sputtering, and the films sputtered in pure Ar are proved to possess the most oxygen vacancies by the calculations of energy band structure and carrier concentration. It is found that oxygen vacancies are involved in the process of indirect Er3+ ions related emission. With more oxygen vacancies introduced, the conductivity and energy transfer efficiency of Er doped Ga2O3 films can be enhanced simultaneously, leading to the increasing electroluminescence intensity of the light-emitting devices. The optimized silicon-based devices present the maximum optical power density of ~2 μW/cm2.

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Low driving voltage and high reliability 1.54 μm electroluminescence from SnO2:Er/p-Si heterostructured devices via energy transfer effect

Wu,

Pang,

Wang

et al. 2024

Journal of Applied Physics

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Erbium-doped SnO2 films and devices are fabricated on silicon substrates, and the 1.54 μm emission of erbium ions is realized via energy transfer from the SnO2 host. It is found that the luminescence intensity for SnO2:Er film can be enhanced, by increasing the optical activity and transition probability of Er3+ ions with fluorine codoping. Moreover, the device prepared by the fluorine codoped SnO2 film presents a low turn-on voltage of 1.6 V and an onset electric field of 0.18 MV/cm. The unpackaged device operated for 1028h in the atmosphere, then continued to function at 40 °C/30% RH during 1003 h, with less than 10% optical power attenuation. Through further optimizing the preparation process, the optimal device exhibits an optical power density of 38.5 μW/cm2 at 1.55 μm, due to the improved crystalline quality together with the number of sensitizers. This work demonstrates the practical application potential in silicon-based light sources from erbium-doped SnO2 devices.

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Enhanced luminescence of erbium doped Ga2O3 films and devices by optimizing annealing process

Cited by 3 publications

References 29 publications

Realization of 1.54 μm electroluminescence via silicon-based erbium-doped SnO₂ film devices

Realization of 1.54 μm electroluminescence via silicon-based erbium-doped SnO₂ film devices

Effects of oxygen vacancies on the optical and electrical performances of silicon-based Er doped Ga₂O₃ films

Low driving voltage and high reliability 1.54 μm electroluminescence from SnO2:Er/p-Si heterostructured devices via energy transfer effect

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Enhanced luminescence of erbium doped Ga2O3 films and devices by optimizing annealing process

Cited by 3 publications

References 29 publications

Realization of 1.54 μm electroluminescence via silicon-based erbium-doped SnO2 film devices

Realization of 1.54 μm electroluminescence via silicon-based erbium-doped SnO2 film devices

Effects of oxygen vacancies on the optical and electrical performances of silicon-based Er doped Ga2O3 films

Low driving voltage and high reliability 1.54 μm electroluminescence from SnO2:Er/p-Si heterostructured devices via energy transfer effect

Contact Info

Product

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Realization of 1.54 μm electroluminescence via silicon-based erbium-doped SnO₂ film devices

Realization of 1.54 μm electroluminescence via silicon-based erbium-doped SnO₂ film devices

Effects of oxygen vacancies on the optical and electrical performances of silicon-based Er doped Ga₂O₃ films