Enhanced luminescence from catalyst-free grown InP nanowires

Mattila, Marco; Hakkarainen, Tuula; Lipsanen, Harri; Jiang, Hua; Kauppinen, Esko I.

doi:10.1063/1.2431711

Cited by 45 publications

(51 citation statements)

References 22 publications

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“…[42][43][44][45][46][47][48][49][50][51][52][53][54][55] The inorganic-shell growth onto the core nanocrystals may not eliminate surface dangling bonds, and may also generate a nanocrystal system with different optical/electronic properties. However, proper passivation of the core material by an inorganic material of a different bandgap can also provide both effective elimination of any surfacerelated defect states and the confinement of charge carriers in the core material due to the band-offset potential.…”

Section: Introductionmentioning

confidence: 99%

Review paper: Semiconductor nanoparticles with surface passivation and surface plasmon

Jung

Kim

Nahm

et al. 2011

Electron. Mater. Lett.

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Semiconductor nanoparticles have recently attracted a significant amount of attention from the materials science community. Nanoparticles with diameters in the range of 1 nm to 20 nm exhibit unique physical properties that give rise to many potential applications. Two fundamental factors are crucial as regards the novel properties of semiconductor nanoparticles. The first is the large surface-to-volume ratio. In this regard, the surface states are likely to trap electrons and/or holes, and induce a nonradiative recombination of these charge carriers, leading to a reduction in the luminescent and photovoltaic efficiency. The second approach takes advantage of the surface-plasmon resonance from metal nanostructures to semiconductors. The interactions between the semiconductor nanoparticles and the surface plasmons generate enhanced emission by electromagnetic-field amplification, and also causes the suppression of the emission by the energy transfer between the semiconductor and the metal nanoparticles. Therefore, surface passivation and surface plasmon in semiconductor nanoparticles with controlled nanostructures are important when attempting to improve both the luminescent and photovoltaic efficiency.

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Section: Introductionmentioning

confidence: 99%

Review paper: Semiconductor nanoparticles with surface passivation and surface plasmon

Jung

Kim

Nahm

et al. 2011

Electron. Mater. Lett.

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“…Vapour-phase techniques such as molecular beam epitaxy and metal oxide chemical vapour deposition (MOCVD) [26][27][28][29][30][31][32][33][34] generally produce NWs on the pre-designed substrates [35]. There exists a limit on the physical size of the substrate and the number of substrates that may be processed through a single batch.…”

Section: Synthesis Of Indium Phosphide Nanowiresmentioning

confidence: 99%

Indium phosphide nanowires and their applications in optoelectronic devices

Zafar¹,

Iqbal²

2016

Proc. R. Soc. A.

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Group IIIA phosphide nanocrystalline semiconductors are of great interest among the important inorganic materials because of their large direct band gaps and fundamental physical properties. Their physical properties are exploited for various potential applications in high-speed digital circuits, microwave and optoelectronic devices. Compared to II-VI and I-VII semiconductors, the IIIA phosphides have a high degree of covalent bonding, a less ionic character and larger exciton diameters. In the present review, the work done on synthesis of III-V indium phosphide (InP) nanowires (NWs) using vapourand solution-phase approaches has been discussed. Doping and core-shell structure formation of InP NWs and their sensitization using higher band gap semiconductor quantum dots is also reported. In the later section of this review, InP NW-polymer hybrid material is highlighted in view of its application as photodiodes. Lastly, a summary and several different perspectives on the use of InP NWs are discussed.

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“…These calculations are in part motivated by recent experimental results showing that the photoluminescence(PL) intensity in nanowires is strongly polarization dependent 8,52,[58][59][60][61][62] , including Si nanowires 63 . Nanowire polarization effects can arise from the dielectric mismatch at the wire surface 58 , electron-hole recombination selection rules [64][65][66] , as well as from the underlying WZ-type crystal structure [67][68][69][70][71][72] .…”

Section: Introductionmentioning

confidence: 99%

Electronic structure and optical properties of Si, Ge and diamond in the lonsdaleite phase

Pryor

2014

J. Phys.: Condens. Matter

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Crystalline semiconductors may exist in different polytypic phases with significantly different electronic and optical properties. In this paper, we calculate the electronic structure and optical properties of diamond, Si and Ge in the lonsdaleite (hexagonal-diamond) phase. We use an empirical pseudopotentials method based on transferable model potentials, including spin-orbit interactions. We obtain band structures, densities of states and complex dielectric functions calculated in the dipole approximation for light polarized perpendicular and parallel to the c-axis of the crystal. We find strong polarization dependent optical anisotropy. Simple analytical expressions are provided for the dispersion relations. We find that in the lonsdaleite phase, diamond and Si remain indirect gap semiconductors while Ge is transformed into a direct gap semiconductor with a significantly smaller band gap.

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Enhanced luminescence from catalyst-free grown InP nanowires

Cited by 45 publications

References 22 publications

Review paper: Semiconductor nanoparticles with surface passivation and surface plasmon

Review paper: Semiconductor nanoparticles with surface passivation and surface plasmon

Indium phosphide nanowires and their applications in optoelectronic devices

Electronic structure and optical properties of Si, Ge and diamond in the lonsdaleite phase

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