2013
DOI: 10.1016/j.jallcom.2013.05.016
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Enhanced low field magnetoresistance in Sr2Fe1−xAgxMoO6 double perovskite system

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Cited by 9 publications
(9 citation statements)
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“…In general, large LFMR response has been reported in polycrystalline SFMO ceramics instead of single crystal counterparts [1,[7][8][9][10][11][12]. This fact indicates that the LFMR of SFMO is mainly a type of tunneling magnetoresistance, the transport process is related with the spin dependent scattering occurred at insulating grain boundary (GB) between magnetic grains, so the GB strength in polycrystalline SFMO-based ceramics is important for magnetoresistance [1,[7][8][9][10][11][12]. Accordingly, proper GB modifying should be a promising way to improve LFMR of SFMO polycrystalline ceramics.…”
Section: Introductionmentioning
confidence: 99%
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“…In general, large LFMR response has been reported in polycrystalline SFMO ceramics instead of single crystal counterparts [1,[7][8][9][10][11][12]. This fact indicates that the LFMR of SFMO is mainly a type of tunneling magnetoresistance, the transport process is related with the spin dependent scattering occurred at insulating grain boundary (GB) between magnetic grains, so the GB strength in polycrystalline SFMO-based ceramics is important for magnetoresistance [1,[7][8][9][10][11][12]. Accordingly, proper GB modifying should be a promising way to improve LFMR of SFMO polycrystalline ceramics.…”
Section: Introductionmentioning
confidence: 99%
“…[17][18][19]. An interesting common point of these methods should be noted: improved LFMR is always accompanied by increased resistivity [12,18,20]. Therefore, it is reasonable that in order to artificially improve the LFMR of SFMO, the insulator second phases mainly oxides are preferred to modify the GBs.…”
Section: Introductionmentioning
confidence: 99%
“…In the case of SFMO‐Al composites, contradictory experimental results were reported by the same group nearly at the same time . A decrement in LFMR values was obtained in ref.…”
Section: Effect Of Point Defects On Saturation Magnetization Curie Tmentioning
confidence: 86%
“…[160] attributed to the presence of metallic Ag at the GBs, which suppresses spin‐polarized tunneling and, finally reduces magnetoresistance. On the other hand, the enhancement of LFMR was explained in terms of the formation of nonmagnetic patches like Mo‐O‐Ag‐O‐Mo‐O within the grain, which acts as insulating tunnel barrier . For that reason, these data were not considered in Table .…”
Section: Effect Of Point Defects On Saturation Magnetization Curie Tmentioning
confidence: 99%
“…The phenomenon of marvelous magnetoresistance (MR) at room temperature in ordered double perovskite compound A 2 BB 0 O 6 , where A is an alkaline-earth element, B and B 0 are transition metal elements, opens new opportunities for novel device applications such as magnetic recording or high-efficiency magnetic sensors [1][2][3][4][5][6]. A 2 BB 0 O 6 compound is virtually a duplication of the simple perovskite unit cell ABO 3 , where cation A occupies the cube vertices, while B and B 0 cations sit alternately at the center of the oxygen octahedron.…”
Section: Introductionmentioning
confidence: 99%