Enhanced light trapping effect of hierarchical structure assembled from flower-like cobalt tetroxide and 3D-printed structure for efficient solar evaporation

Cui, Tianyang; Cai, Wei; Chu, Fukai; Li, Laurent; Zheng, Yapeng; Gui, Zhilun; Hu, Yuan

doi:10.1016/j.cej.2022.139102

Cited by 34 publications

(6 citation statements)

References 43 publications

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“…This excellent anti-reflection property is caused by the subwavelength structure surface of the SiNPs, also known as a light-trapping structure. 35,36 The surface area of a light-trapping structure can be significantly increased by increasing either the aperture or the hole depth of the SiNP, thus greatly increasing the reflection time of the incident light and significantly extending the reflection path, as shown in the illustration. Therefore, absorption of incident light on a Si material can be strongly increased, so SiNPs exhibit excellent anti-reflection characteristics.…”

Section: Resultsmentioning

confidence: 99%

Controllable Fabrication of Silicon Nanopore Arrays by Two-Step Inductively Coupled Plasma Etching Using Self-Assembled Anodic Aluminum Oxide Mask

Tian

Meng

Yang

et al. 2023

ECS J. Solid State Sci. Technol.

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Silicon nanopore arrays (SiNPs) were prepared by a two-step inductively coupled plasma (ICP) etching process using a self-assembled anodic aluminum oxide film mask. The influence of etching parameters (first-step etching time, Cl2 proportion in the etching gas, etching pressure, ICP power, and radio frequency (RF) power) on the morphology of the SiNPs were systematically investigated. The results revealed that the first step of ICP etching can effectively remove the barrier layer of the mask. Higher Cl2 proportion and lower etching pressure increase the chemical corrosion and physical bombardment of ICP etching, respectively, which may damage the porous morphology. ICP power affects both chemical reaction etching and physical bombardment, but the RF power mainly affects physical etching. The etching rate is positively correlated with Cl2 proportion and RF power, and negatively correlated with etching pressure. The optimized first-step etching time, Cl2/Ar ratio, etching pressure, ICP power and RF power for high-quality SiNPs are approximately 10 s, 60%, 7 mTorr, 900 W and 100 W, respectively. Precise control of the pore size and depth of the SiNPs can be achieved using this controllable growth process. These results demonstrate a simple and controllable way to achieve good quality SiNPs with desired sizes.

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Section: Resultsmentioning

confidence: 99%

Controllable Fabrication of Silicon Nanopore Arrays by Two-Step Inductively Coupled Plasma Etching Using Self-Assembled Anodic Aluminum Oxide Mask

Tian

Meng

Yang

et al. 2023

ECS J. Solid State Sci. Technol.

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“…13A). 113 Finally, the evaporation rate of the solar evaporator reached 2.03 kg m −2 h −1 under one solar irradiation. When the flower-like structure is used to control heat distribution, the flower-like structure has a larger specific surface area, allowing more heat to be concentrated at the interface.…”

Section: Functions Of Biomimetic Ssg Systemsmentioning

confidence: 93%

Nature-inspired sustainable solar evaporators for seawater desalination

Song,

Jia,

Wei

et al. 2024

J. Mater. Chem. A

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“…41 It is well-known that one sun illumination is widely adopted in experimental works, while the sun light of full concentration is rarely employed. [54][55][56][57][58] We therefore consider one sun illumination in this work.…”

Section: Computational Detailsmentioning

confidence: 99%

Group-IIIA element doped BaSnS₂ as a high efficiency absorber for intermediate band solar cell from a first-principles insight

Xue,

Lin,

Zhong

et al. 2024

Phys. Chem. Chem. Phys.

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Enhanced light trapping effect of hierarchical structure assembled from flower-like cobalt tetroxide and 3D-printed structure for efficient solar evaporation

Cited by 34 publications

References 43 publications

Controllable Fabrication of Silicon Nanopore Arrays by Two-Step Inductively Coupled Plasma Etching Using Self-Assembled Anodic Aluminum Oxide Mask

Controllable Fabrication of Silicon Nanopore Arrays by Two-Step Inductively Coupled Plasma Etching Using Self-Assembled Anodic Aluminum Oxide Mask

Nature-inspired sustainable solar evaporators for seawater desalination

Group-IIIA element doped BaSnS₂ as a high efficiency absorber for intermediate band solar cell from a first-principles insight

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Enhanced light trapping effect of hierarchical structure assembled from flower-like cobalt tetroxide and 3D-printed structure for efficient solar evaporation

Cited by 34 publications

References 43 publications

Controllable Fabrication of Silicon Nanopore Arrays by Two-Step Inductively Coupled Plasma Etching Using Self-Assembled Anodic Aluminum Oxide Mask

Controllable Fabrication of Silicon Nanopore Arrays by Two-Step Inductively Coupled Plasma Etching Using Self-Assembled Anodic Aluminum Oxide Mask

Nature-inspired sustainable solar evaporators for seawater desalination

Group-IIIA element doped BaSnS2 as a high efficiency absorber for intermediate band solar cell from a first-principles insight

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Group-IIIA element doped BaSnS₂ as a high efficiency absorber for intermediate band solar cell from a first-principles insight