Enhanced Light Extraction Efficiency of GaN-Based Hybrid Nanorods Light-Emitting Diodes

Huang, Jen Hsien; Liu, Che-Yu; Chen, Tzi-Pei; Huang, H. W.; Lai, Fang‐I; Lee, Po-Tsung; Lin, Chien-Chung; Chang, Ching-Chien; Kao, Tsung Sheng; Kuo, Hao‐Chung

doi:10.1109/jstqe.2015.2389529

Cited by 36 publications

(15 citation statements)

References 33 publications

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“…In addition, improvement in optical properties can also be expected from nanorod LED structures. First, light extraction efficiency (LEE) can be increaed greatly in the nanorod LED stuctures [17][18][19]. Owing to the nano-scale geometry, light can easily escape from the nanorod overcoming the total internal reflection inside it.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of Light Extraction Efficiency of GaN-Based Nanorod Light-Emitting Diodes by Averaging over Source Positions and Polarizations

Ryu

2018

Crystals

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Light extraction efficiency (LEE) of GaN-based nanorod blue light-emitting diode (LED) structures is investigated using finite-difference time-domain (FDTD) simulations. When the LEE is calculated for different source positions inside the nanorod, the LEE is found to depend strongly on the source positions and the polarization directions for each source position, implying that the LEE of nanorod LED structures should be evaluated by averaging over source positions and polarization directions for determining the LEE accurately. The averaged LEE of nanorod LED structures is simulated as the radius, the p-GaN thickness, and the n-GaN thickness is varied, and the optimum structural parameters can be obtained. In addition, the far-field pattern is simulated when considering the averaging effects, and the circularly symmetric and uniform emission distribution is obtained.

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Section: Introductionmentioning

confidence: 99%

Evaluation of Light Extraction Efficiency of GaN-Based Nanorod Light-Emitting Diodes by Averaging over Source Positions and Polarizations

Ryu

2018

Crystals

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“…Nanoscale light-emitting devices have attracted much attention for their potential applications in biotechnology [ 1 , 2 ], communication [ 3 ] and solid state lighting [ 4 , 5 ]. Compared to planar light-emitting diodes (LEDs), nanorod LEDs show high performances with higher internal quantum efficiency (IQE), higher light extraction efficiency (LEE) and optimal directionality [ 4 – 20 ].…”

Section: Introductionmentioning

confidence: 99%

The effects of nanocavity and photonic crystal in InGaN/GaN nanorod LED arrays

et al. 2016

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InGaN/GaN nanorod light-emitting diode (LED) arrays were fabricated using nanoimprint and reactive ion etching. The diameters of the nanorods range from 120 to 300 nm. The integral photoluminescence (PL) intensity for 120 nm nanorod LED array is enhanced as 13 times compared to that of the planar one. In angular-resolved PL (ARPL) measurements, there are some strong lobes as resonant regime appeared in the far-field radiation patterns of small size nanorod array, in which the PL spectra are sharp and intense. The PL lifetime for resonant regime is 0.088 ns, which is 40 % lower than that of non-resonant regime for 120 nm nanorod LED array. At last, three dimension finite difference time domain (FDTD) simulation is performed. The effects of guided modes coupling in nanocavity and extraction by photonic crystals are explored.

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“…Recently, GaN based nanorods have attracted increasing attention due to promising applications in solid-state lighting [1,2], visible light communication [3,4], and water photolysis [5]. Bottom-up and top-down are two main kinds of methods to fabricate the GaN-based nanorods.…”

Section: Introductionmentioning

confidence: 99%

The anti-surfactant effect of silane on the facets-controlled growth of GaN nanorods by MOCVD

Chen

et al. 2016

Superlattices and Microstructures

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Enhanced Light Extraction Efficiency of GaN-Based Hybrid Nanorods Light-Emitting Diodes

Cited by 36 publications

References 33 publications

Evaluation of Light Extraction Efficiency of GaN-Based Nanorod Light-Emitting Diodes by Averaging over Source Positions and Polarizations

Evaluation of Light Extraction Efficiency of GaN-Based Nanorod Light-Emitting Diodes by Averaging over Source Positions and Polarizations

The effects of nanocavity and photonic crystal in InGaN/GaN nanorod LED arrays

The anti-surfactant effect of silane on the facets-controlled growth of GaN nanorods by MOCVD

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