Enhanced light emission of double heterostructured MgZnO/ZnO/MgZnO in ultraviolet blind light-emitting diodes deposited by vapor cooling condensation system

Abstract

Enhanced output power using MgZnO/ZnO/MgZnO double heterostructure in ZnO homojunction light emitting diode

Band alignment and interfacial structure of ZnO/Ge heterojunction investigated by photoelectron spectroscopy

“…Developed p-n heterojunction ZnO LEDs have shown electroluminescence in UV and visible wavelength range. [2][3][4] In addition to this, p-n heterojunction of ZnO has also shown potential applications in UV photodetectors. 5,6 Recently, Ge substrate based technology has attracted much attention for the next generation high carrier mobility devices because of larger electron and hole mobility as compared to Si.…”

ZnO-Based Solar Blind Ultraviolet-C Photodetectors Using SiZnO Absorption Layer

“…The mechanisms for depositing the ZnO-based films were also reported, previously [9]. Using this system to deposit ZnO-based films, the high performances of the resulting UV photodetectors and the UV blind light-emitting diodes were demonstrated [10], [11]. To extend the detection wavelength to the shorter UV wavelength range, the materials with wider bandgap energy were required.…”

Homostructured ZnO-based metal-oxide-semiconductor field-effect transistors deposited at low temperature by vapor cooling condensation system

“…However, the efforts aimed at the ZnO-based homojunction structures have been devoted, recently. Based on the stable intrinsic and pZnO films deposited using the vapor cooling condensation system [15][16][17] and the resulting optoelectronic devices were previously reported [18,19], the homostructured ZnO-based metal-oxidesemiconductor field-effect transistors (MOSFETs) were fabricated and studied in this work.…”