Enhanced Interface Characteristics of PA-ALD HfOxNy/InGaAs MOSCAPs Using IPA Oxygen Reactant and Cyclic N2 Plasma

Eom, Su-Keun; Kong, Minwoo; Kang, Myoung-Jin; Lee, Jae-Gil; Cha, Ho-Young; Seo, Kwang-Seok

doi:10.1109/led.2018.2870176

Cited by 7 publications

(12 citation statements)

References 25 publications

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“…We hypothesize that the reduced inversion hump and decrease of the EOT originate from the suppression of unintentional interfacial oxides by the use of the IPA oxidant. Detailed material characteristics analysis was conducted and proved the hypothesis to be convincing [41]. To our knowledge, it is the first successful demonstration of HfO 2 deposition using IPA at InGaAs substrate.…”

Section: Development Of Ipa-based Ald Hfo 2 On N-type Ingaas Substratesmentioning

confidence: 59%

“…By using the proposed nitridation technology, HfO x N y /InGaAs MOS capacitors are fabricated showing promising results as shown in Figure 6 [41]. A significant suppression of the frequency dispersion was observed upon nitrogen incorporation in every gate bias range.…”

Section: Development Of Ipa-based Ald Hfo 2 On N-type Ingaas Substratesmentioning

confidence: 96%

“…This might affect the further scaling down potential and the border trap density in ALD HfO 2 application on InGaAs substrate [40]. By using the developed O 3 -and IPA-based HfO 2 dielectrics, HfO 2 /InGaAs MOS capacitors were successfully demonstrated [41]. The multifrequency (1 kHz-1 MHz) C-V characteristics of HfO 2 /n-In 0.53 Ga 0.47 As MOS capacitors using the O 3 and IPA oxidants are presented in Figure 3.…”

Section: Development Of Ipa-based Ald Hfo 2 On N-type Ingaas Substratesmentioning

confidence: 99%

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Development and Characterization of High-Quality HfO₂/InGaAs MOS Interface

Eom¹,

Kong²,

Seo³

2020

Recent Advances in Nanophotonics - Fundamentals and Applications

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The scope of this chapter is to introduce a highly efficient HfO2 atomic layer deposition (ALD) process with superior interface defect characteristics that can be applied on high-mobility III-V substrates. For a long time, the major academic research of III-V metal-oxide-semiconductor (MOS) studies was mainly oriented on searching for the suitable high-k dielectric, and among the reported high-k/III-V MOS studies, Al2O3 and AlN have demonstrated the most promising results. However, usually, the dielectrics with higher dielectric constant suffered from more defective interface quality including the HfO2, which should be overcome to meet the intensive operation voltage scaling requirements. In order to protect the interface of the HfO2/III-V MOS, the exposed III-V surface has to be carefully treated before, while, and after the whole high-k deposition process. For this purpose, the effect of isopropyl alcohol precursor and in situ cyclic nitrogen plasma treatment on the HfO2 ALD process at III-V substrates was thoroughly investigated. Remarkable interface state density levels with strong inversion behavior were achieved, which have not been observed at the previous HfO2/InGaAs studies. Also, detailed analysis of the interface characteristics was investigated to broaden the understanding of the improvement phenomenon.

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Section: Development Of Ipa-based Ald Hfo 2 On N-type Ingaas Substratesmentioning

confidence: 59%

Section: Development Of Ipa-based Ald Hfo 2 On N-type Ingaas Substratesmentioning

confidence: 96%

Section: Development Of Ipa-based Ald Hfo 2 On N-type Ingaas Substratesmentioning

confidence: 99%

See 1 more Smart Citation

Development and Characterization of High-Quality HfO₂/InGaAs MOS Interface

Eom¹,

Kong²,

Seo³

2020

Recent Advances in Nanophotonics - Fundamentals and Applications

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“…The gate stacks studied in this work are shown in Table 1. Details of the pretreatment and the high-k dielectric deposition processes were described in our previous work [11]. The bi-layer gate stack consisted of an IPA-based PA-ALD HfO x N y for the interface and an O 3 -based PA-ALD HfO x N y for the bulk.…”

Section: Methodsmentioning

confidence: 99%

“…Our previous work demonstrated the excellent interface characteristics with the optimized plasma-assisted atomic -layer-deposition (PA-ALD) HfO x N y process [11]. Noticeable trade-off relationships in terms of bulk and interface quality existed between the O 3 and Isopropylalcohol (IPA) based HfO x N y .…”

Section: Introductionmentioning

confidence: 99%

Characterization of High-Performance InGaAs QW-MOSFETs With Reliable Bi-Layer HfO_xN_y Gate Stack

Eom

Kong

Cha

et al. 2019

IEEE J. Electron Devices Soc.

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In this work, we report high-performance InGaAs quantum-well MOSFETs with optimized bi-layer high-k gate dielectrics incorporating high-quality plasma-assisted atomic-layer-deposited (PA-ALD) HfO x N y interfacial layer (IL). With more than 1 nm IL deposition to passivate the InGaAs surface, excellent sub-threshold characteristics (SS min = 68 mV/dec) were achieved through the proposed gate stack technology. We performed positive-bias-temperature-instability (PBTI) measurements in order to ensure a reliable gate operation. The proposed bi-layer III-V gate stack achieved the excellent value of maximum gate overdrive voltage (V OV,max) of 0.49 V with CET = 1.04 nm. The proposed gate stack has a great potential for III-V MOSFET technology to low power logic applications. INDEX TERMS Indium gallium arsenide (InGaAs), III-V MOSFET, high-k gate dielectric, hafnium oxynitride (HfO x N y), PBTI reliability.

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A Brief Review of Passivation Materials and Process for High Efficiency PERC Solar Cell

Kim

Lee

Chowdhury

et al. 2021

Trans. Electr. Electron. Mater.

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Enhanced Interface Characteristics of PA-ALD HfO_xN_y/InGaAs MOSCAPs Using IPA Oxygen Reactant and Cyclic N₂ Plasma

Cited by 7 publications

References 25 publications

Development and Characterization of High-Quality HfO₂/InGaAs MOS Interface

Development and Characterization of High-Quality HfO₂/InGaAs MOS Interface

Characterization of High-Performance InGaAs QW-MOSFETs With Reliable Bi-Layer HfO_xN_y Gate Stack

A Brief Review of Passivation Materials and Process for High Efficiency PERC Solar Cell

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Enhanced Interface Characteristics of PA-ALD HfOxNy/InGaAs MOSCAPs Using IPA Oxygen Reactant and Cyclic N2 Plasma

Cited by 7 publications

References 25 publications

Development and Characterization of High-Quality HfO2/InGaAs MOS Interface

Development and Characterization of High-Quality HfO2/InGaAs MOS Interface

Characterization of High-Performance InGaAs QW-MOSFETs With Reliable Bi-Layer HfOxNy Gate Stack

A Brief Review of Passivation Materials and Process for High Efficiency PERC Solar Cell

Contact Info

Product

Resources

About

Enhanced Interface Characteristics of PA-ALD HfO_xN_y/InGaAs MOSCAPs Using IPA Oxygen Reactant and Cyclic N₂ Plasma

Development and Characterization of High-Quality HfO₂/InGaAs MOS Interface

Development and Characterization of High-Quality HfO₂/InGaAs MOS Interface

Characterization of High-Performance InGaAs QW-MOSFETs With Reliable Bi-Layer HfO_xN_y Gate Stack