2016
DOI: 10.1039/c6ta04123j
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Enhanced ideal strength of thermoelectric half-Heusler TiNiSn by sub-structure engineering

Abstract: In realistic applications, high strength, high toughness TiNiSn based TE devices are required.

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Cited by 52 publications
(25 citation statements)
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“…On the atomic scale, the structural rigidity relies on the bond stiffness. 37 The breakage of Co−Sb bonds leads to the remarkably decreased structural rigidity of the CoSb 3 /TiCoSb interface, resulting in the stress relaxation as shown in Figure 9(a). This suggests that the CoSb 3 /TiCoSb interface can no longer resist the external deformation, representing the structural collapse and failure of the 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 17 Co3−Sb3 represent structural fa...…”
Section: Structure and Bonding Analysis Of The Cosb 3 /Ticosb Interfacementioning
confidence: 99%
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“…On the atomic scale, the structural rigidity relies on the bond stiffness. 37 The breakage of Co−Sb bonds leads to the remarkably decreased structural rigidity of the CoSb 3 /TiCoSb interface, resulting in the stress relaxation as shown in Figure 9(a). This suggests that the CoSb 3 /TiCoSb interface can no longer resist the external deformation, representing the structural collapse and failure of the 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 17 Co3−Sb3 represent structural fa...…”
Section: Structure and Bonding Analysis Of The Cosb 3 /Ticosb Interfacementioning
confidence: 99%
“…[2][3][4][5][6][7] Meanwhile, Half-Heusler compounds such as XNiSn and XCoSb (X = Ti, Zr, Hf) have peak TE properties in a higher temperature range (750 -900 K). [8][9][10] Designing segmented TE devices with various TE materials (e.g., CoSb 3 /TiCoSb TE devices) in their respective temperature ranges results in an overall high TE efficiency, 11 but also creates new interfaces such as CoSb 3 /TiCoSb interface.…”
Section: Introductionmentioning
confidence: 99%
“…Here, we compared the ideal shear strength of Bi 2 Te 3 with various high-performance TE materials [34,[42][43][44][45]. As shown in Fig.…”
Section: -3mentioning
confidence: 99%
“…To determine the structure − property relation of PbTe, we studied the elastic mechanical properties to provide essential information on the structural stability, as listed in 37,38 This suggests that PbTe has a significantly lower structural stiffness than CoSb 3 and TiNiSn. In addition, we also investigated the elastic mechanical properties of PbSe and PbS, as listed in Table 1.…”
Section: Elastic Properties In Pbtementioning
confidence: 99%
“…The ideal shear strength (3.46 GPa) of PbTe is higher than those of layered TE materials such as Mg 3 Sb 2 (1.95 GPa) and SnSe (0.59 GPa), 40,41 but it is much lower than those of 3D TE materials with 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 12 strong covalent frameworks such as CoSb 3 (7.17 GPa) and TiNiSn (10.52 GPa). 37,38 The PbTe compound shows an extremely high zT value experimentally. 3,4 However, its ideal strength is relatively low.…”
Section: Effect On Ideal Strength Of Pbte By Alloyingmentioning
confidence: 99%