Enhanced hole injection in Ga-polar 290 nm AlGaN-based DUV LEDs with a p-n junction hole accelerator
Wentao Tian,
Mengran Liu,
Shuti Li
et al.
Abstract:The limited kinetic energy of holes in AlGaN-based deep ultraviolet
light-emitting diodes (DUV LEDs) poses a challenge in their
transportation into the active region across the Al-rich electron
blocking layer (EBL) and significantly restricts the electrical and
optical performance of DUV LEDs. In this work, we propose a hole
accelerator structure composing a
p-AlxGa1-xN/n-AlxGa1-xN
junction to improve the hole injection efficiency and explore the
mechanism behind the enh… Show more
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