Enhanced gas sensing properties of indium doped ZnO thin films

Bharath, Somalapura Prakasha; Bangera, Kasturi V.; Shivakumar, G. K.

doi:10.1016/j.spmi.2018.10.010

Cited by 34 publications

(7 citation statements)

References 12 publications

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“…Many authors reported band gap widening with an increase in donor concentration in ZnO, which is attributed to With an increase in the doping level, the average transmittance T av in the visible region (380-760 nm) tends to decrease (see Inset a' in Figure 3a). This may be due to an increase in the photon scattering on ZnO crystal lattice defects caused by the incorporation of In into the lattice [24][25][26].…”

Section: Resultsmentioning

confidence: 99%

The ZnO-In2O3 Oxide System as a Material for Low-Temperature Deposition of Transparent Electrodes

Akhmedov

Abduev²,

Murliev

et al. 2021

Materials

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The development of optoelectronic devices based on flexible organic substrates substantially decreases the possible process temperatures during all stages of device manufacturing. This makes it urgent to search for new transparent conducting oxide (TCO) materials, cheaper than traditional indium-tin oxide (ITO), for the low-temperature deposition of transparent electrodes, a necessary component of most optoelectronic devices. The article presents the results of a vertically integrated study aimed at the low-temperature production of TCO thin films based on a zinc-indium oxide (ZIO) system with acceptable functional characteristics. First, dense and conducting ceramic targets based on the (100-x) mol% (ZnO) + x mol% (In2O3) system (x = 0.5, 1.5, 2.5, 5.0, and 10.0) were synthesized by the spark plasma sintering method. The dependences of the microstructure and phase composition of the ZIO ceramic targets on the In2O3 content have been studied by powder X-ray diffraction, scanning electron microscopy and energy dispersive X-ray spectroscopy methods. Then, a set of ZIO thin films with different Zn/In ratios were obtained on unheated glass substrates by direct current (dc) magnetron sputtering of the sintered targets. Complex studies of microstructure, electrical and optical properties of the deposited films have revealed the presence of an optimal doping level (5 mol% In2O3) of the ZIO target at which the deposited TCO films, in terms of the combination of their electrical and optical properties, become comparable to the widely used expensive ITO.

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Section: Resultsmentioning

confidence: 99%

The ZnO-In2O3 Oxide System as a Material for Low-Temperature Deposition of Transparent Electrodes

Akhmedov

Abduev²,

Murliev

et al. 2021

Materials

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“…It is well established that the physical characteristics of nanomaterials are affected by the size and morphology of nanoparticles. Due to the substitution of guest ions in the ZnO lattice, the increase in the surface/volume ratio due to the decrease in the size of the crystallites allows surface defects to play an important role in all surface-induced applications such as gas adsorption, [31][32][33] wettability, [34,35] photocatalytic activities [36] along with it get applications in gap optics [37] and transparent conductors. [38] The most promising doping atoms for p-type ZnO production are the I and V elements, however, it is difficult to introduce the acceptor level in the ZnO band gap.…”

Section: Introductionmentioning

confidence: 99%

Evolution of Relaxor‐Type High‐k Dielectric in Bulk Pristine Cu²⁺ and Li⁺ Co‐Substituted Wurtzite ZnO

Singh,

Kumar,

Singh

2023

ChemistrySelect

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Dielectric constants determine the level of miniaturization in capacitive components involved in electronic devices. Cu‐Li co‐doping is attempted to introduce the multiferroic relaxor nature of dielectricity and dilute magnetism in the bulk material simultaneously as Li+ ion substitution in ZnO lattice is known to form acceptor states within the band gap of ZnO and paramagnetic Cu2+ present in ZnO lattice can introduce dilute magnetism. Phase purity and substitution of Cu2+ and Li+ ions in ZnO lattice along with oxide‐ion vacancy formation was confirmed using Powder x‐ray diffraction (XRD), Scanning Electron Microscope (SEM), and Energy Dispersive X‐ray analysis (EDX), X‐ray Photoelectron Spectroscopy (XPS), Inductively Coupled Plasma Mass Spectrometry (ICP‐MS) and Magnetic property measurement system (MPMS) studies. The dielectric constant (ϵr′) of bulk pristine Zn0.92Cu0.05Li0.03O and Zn0.9Cu0.05Li0.05O is found to be 18000 and 20000 respectively at 1000 Hz frequency at 600 °C. Both dielectric constant and dielectric loss were decreasing with increasing frequencies. The increase in dielectric constant (ϵr′) with increasing temperatures at different frequencies for Zn0.92Cu0.05Li0.03O1‐δ and Zn0.9Cu0.05Li0.05O1‐δ is likely due to the localized nature of hopping charge carriers in addition to interfacial polarization due to space charge. Tm was found to increase with increasing frequencies suggesting the relaxor nature of dielectricity in the Zn0.9Cu0.05Li0.05O1‐δ. Bulk pristine Zn0.9Cu0.05Li0.05O1‐δ also exhibits ferroelectricity at room temperature with remnant polarization Pr and Vc equal to 4.20e–02 μC/cm2 and 4.1e+03 V/cm at (30KV, 500 Hz) respectively. Zn0.9Cu0.05Li0.05O also shows the paramagnetic behaviour.

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“…Yüksek performans sergileyen kaliteli bir ince film elde etmek; katkılamaya, üretim koşullarına ve üretim tekniğine bağlıdır [9]. ZnO ince filmler, literatürde, termal buharlaştırma [17], sol-jel [18], RF magnetron saçtırma [19], kimyasal buhar biriktirme, [20], sprey piroliz [21] ve ultrasonik sprey piroliz [22] gibi üretim yöntemleri ile elde edilmiştir. Sprey piroliz, geniş alanda ince film biriktirmeye uygundur ve düşük maliyetlidir.…”

Section: Introductionunclassified

Ultrasonik Sprey Piroliz ile Üretilen ZnO İnce Filmlerin Alttaş Sıcaklıklarının Yapısal ve Optik Özelliklerine Etkisi

Koç

2021

Süleyman Demirel Üniversitesi Fen Edebiyat Fakültesi Fen Dergisi

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Özet: Bu çalışmada, ZnO ince filmler; 350, 400 ve 450 °C üç farklı sıcaklıktaki alttaşa ultrasonik sprey piroliz yöntemi ile biriktirilmiştir. ZnO ince film üretiminde çinko kaynağı olarak çinko asetat dihidrat (Zn(CH3COO)2.2H2O) kullanılmıştır. Yapılan XRD analizleri, ZnO ince filmlerin, nano boyutta hekzagonal yapıda ve baskın pik pozisyonunun (100) düzleminde olduğunu doğrulamıştır. Kristal tane boyutu Debye-Scherrer formülü kullanılarak hesaplanmış ve 324.7-442.3 Å aralığında bulunmuştur. SEM yüzey görüntüleri incelendiğinde ZnO ince filmlerin homojen bir şekilde kaplandığı ve SEM kesit görüntülerinden kalınlıkların 251-286 nm aralığında değiştiği görülmektedir. Filmlerin yüzey pürüzlülüğü AFM ile incelenmiş ve yüzey pürüzlülük değerleri 23.00-43.44 nm aralığında elde edilmiştir. ZnO ince filmlerin UV spektrumlarından, optik geçirgenlikleri %80' in üzerinde bulunurken, yasak enerji aralıkları 3.13-3.26 eV olarak bulunmuştur.

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Enhanced gas sensing properties of indium doped ZnO thin films

Cited by 34 publications

References 12 publications

The ZnO-In2O3 Oxide System as a Material for Low-Temperature Deposition of Transparent Electrodes

The ZnO-In2O3 Oxide System as a Material for Low-Temperature Deposition of Transparent Electrodes

Evolution of Relaxor‐Type High‐k Dielectric in Bulk Pristine Cu²⁺ and Li⁺ Co‐Substituted Wurtzite ZnO

Ultrasonik Sprey Piroliz ile Üretilen ZnO İnce Filmlerin Alttaş Sıcaklıklarının Yapısal ve Optik Özelliklerine Etkisi

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Enhanced gas sensing properties of indium doped ZnO thin films

Cited by 34 publications

References 12 publications

The ZnO-In2O3 Oxide System as a Material for Low-Temperature Deposition of Transparent Electrodes

The ZnO-In2O3 Oxide System as a Material for Low-Temperature Deposition of Transparent Electrodes

Evolution of Relaxor‐Type High‐k Dielectric in Bulk Pristine Cu2+ and Li+ Co‐Substituted Wurtzite ZnO

Ultrasonik Sprey Piroliz ile Üretilen ZnO İnce Filmlerin Alttaş Sıcaklıklarının Yapısal ve Optik Özelliklerine Etkisi

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Evolution of Relaxor‐Type High‐k Dielectric in Bulk Pristine Cu²⁺ and Li⁺ Co‐Substituted Wurtzite ZnO