Enhanced fraction of coupled Er in silicon-rich silicon oxide layers grown by magnetron co-sputtering

Hijazi, Khalil; Khomenkova, L.; Gourbilleau, Fabrice; Cardin, Julien; Rizk, R.

doi:10.1016/j.jlumin.2009.04.037

Cited by 5 publications

(7 citation statements)

References 20 publications

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“…The highest PL intensity in the 500- to 950-nm spectral range is detected for the sample annealed at 1,100°C for 1 h (Figure 1a). This PL band is a feature of Si-ncs, which confirmed the Si-nc formation in our sample similar to the results of another work [21]. In the infrared spectral range (1.4 to 1.6 μ m), the highest Er 3+ PL efficiency was obtained for the sample annealed at 600°C (Figure 1b).…”

Section: Resultssupporting

confidence: 91%

“…The Er content and the Si excess were independently controlled through the RF power applied on the corresponding cathode. More details on the fabrication processes can be found in other works [12,21]. The thickness of the Er-SRSO layer was 200 nm.…”

Section: Methodsmentioning

confidence: 99%

“…The thickness of the Er-SRSO layer was 200 nm. The concentration of Er 3+ ions in the sample was 1×10 21 at./cm 3 , while the Si excess was about 5 at.% [21]. To study the effect of post-fabrication treatment on structural and optical properties of the layers, each sample was divided into several parts.…”

Section: Methodsmentioning

confidence: 99%

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Nanoscale evidence of erbium clustering in Er-doped silicon-rich silica

et al. 2013

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Photoluminescence spectroscopy and atom probe tomography were used to explore the optical activity and microstructure of Er3+-doped Si-rich SiO2 thin films fabricated by radio-frequency magnetron sputtering. The effect of post-fabrication annealing treatment on the properties of the films was investigated. The evolution of the nanoscale structure upon an annealing treatment was found to control the interrelation between the radiative recombination of the carriers via Si clusters and via 4f shell transitions in Er3+ ions. The most efficient 1.53-μm Er3+ photoluminescence was observed from the films submitted to low-temperature treatment ranging from 600°C to 900°C. An annealing treatment at 1,100°C, used often to form Si nanocrystallites, favors an intense emission in visible spectral range with the maximum peak at about 740 nm. Along with this, a drastic decrease of 1.53-μm Er3+ photoluminescence emission was detected. The atom probe results demonstrated that the clustering of Er3+ ions upon such high-temperature annealing treatment was the main reason. The diffusion parameters of Si and Er3+ ions as well as a chemical composition of different clusters were also obtained. The films annealed at 1,100°C contain pure spherical Si nanocrystallites, ErSi3O6 clusters, and free Er3+ ions embedded in SiO2 host. The mean size and the density of Si nanocrystallites were found to be 1.3± 0.3 nm and (3.1± 0.2)×1018 Si nanocrystallites·cm−3, respectively. The density of ErSi3O6 clusters was estimated to be (2.0± 0.2)×1018 clusters·cm−3, keeping about 30% of the total Er3+ amount. These Er-rich clusters had a mean radius of about 1.5 nm and demonstrated preferable formation in the vicinity of Si nanocrystallites.

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Section: Resultssupporting

confidence: 91%

Section: Methodsmentioning

confidence: 99%

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Nanoscale evidence of erbium clustering in Er-doped silicon-rich silica

et al. 2013

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“…This is supported by the visible PL band centered at ~750 nm which can be attributed to Si-ncs. Similar Er PL features have been obtained earlier by our group on Er-doped SRSO samples grown with T S =500°C [4]. PL spectrum of the 'as-deposited' SRSO:Er sample.…”

Section: Resultssupporting

confidence: 84%

Impact of the annealing temperature on the optical performances of Er-doped Si-rich silica systems

Cueff

Labbé

Cardin

et al. 2009

IOP Conf. Ser.: Mater. Sci. Eng.

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“…As discussed on figures 1 and 2, excessive Si in the matrix is required to form Si agglomerates and thus achieve Nd 3+ -emission under a non-resonant excitation (488 nm) [44,45]. These agglomerates, according to the TEM, Raman, and XPS experimental results, are amorphous and small for the optimized sample.…”

Section: Et Mechanismsmentioning

confidence: 95%

Correlation between composition, microstructure, and emission properties in Nd-doped Si-rich Si oxynitride films: investigation into the nature of the sensitizer

Liang¹,

An²,

Wang³

et al. 2018

Nanotechnology

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Rare earth (RE) ions doped in Si-based materials, compatible with Si technology, are promising compounds with regards to optical communication and energy conversion. In this article, we show the emission properties of Nd-doped Si-rich Si oxynitride (Nd-SRSON) films, and their dependence on the dangling bond density and the nature of the sensitizer. These films were prepared by reactive magnetron sputtering and post-annealing. The film composition, microstructure, and emission properties were investigated as a function of deposition parameters and annealing temperatures. Both Fourier transform infrared (FTIR) and ellipsometry spectroscopy measurements have confirmed that the sample composition (Si/N ratio) can be carefully tuned by varying the ratio of reactive nitrogen to argon in the sputtering plasma. Moreover, FTIR and x-ray photoelectron spectroscopy measurements demonstrate the existence of both nitrogen and oxygen dangling bonds (N· and O·) in as-deposited samples. These dangling bonds were passivated during annealing. Under non-resonant excitation at 488 nm, the films exhibit a significant photoluminescence (PL) signal from Nd 3+ ions demonstrating the occurrence of an effective sensitization of Nd 3+ ions in the host matrix. Both PL excitation and ellipsometry results (the energy band gap from new amorphous model) exclude the sensitization by an exciton with energy over the band gap, whereas the presence of Si agglomerates, at the atomic scale, have been identified as effective sensitizers towards Nd 3+ ions. This work not only provides knowledge to optimize Si-based materials for favorable emission properties, but also, presents a universal methodology to investigate the nature of sensitizers for RE emitters. This allows one to find correlations between composition, microstructure, and emission properties.

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Enhanced fraction of coupled Er in silicon-rich silicon oxide layers grown by magnetron co-sputtering

Cited by 5 publications

References 20 publications

Nanoscale evidence of erbium clustering in Er-doped silicon-rich silica

Nanoscale evidence of erbium clustering in Er-doped silicon-rich silica

Impact of the annealing temperature on the optical performances of Er-doped Si-rich silica systems

Correlation between composition, microstructure, and emission properties in Nd-doped Si-rich Si oxynitride films: investigation into the nature of the sensitizer

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