Enhanced formation of thermal donors in oxygen-implanted silicon annealed at different pressures

Neustroev, E. P.; Antonova, I. V.; Popov, V.; Kilanov, D.V.; Misiuk, A.

doi:10.1016/s0921-4526(00)00535-4

Cited by 7 publications

(4 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…While V 2 O center anneals above 400°C, the defect related to the level A4 remains localized close to proton end-of-range even after annealing at 500°C. Since the level A4 appears during annealing of major parts of radiation defects, it can be formed by multiple vacancy complexes like V n and VO n [14]. Unfortunately, DLTS measurement cannot be applied if the concentration of radiation defects exceeds shallow doping.…”

Section: Methodsmentioning

confidence: 99%

Electrical Characterization of Deep-Lying Donor Layers Created by Proton Implantation and Subsequent Annealing in N-Type Float Zone and Czochralski Silicon

Komarnitskyy¹,

Hazdra²

2009

ECS Trans.

View full text Add to dashboard Cite

The deep-lying donor layers created by proton implantation and subsequent isochronal annealing were investigated in silicon substrates with oxygen concentration changing from 2x10^16 cm-3 to 1.4x10^18 cm-3. Implantation was performed with 700 keV and 1.8 MeV protons to fluence ranging from 1x10^10 to 1x10^15 cm-2. Results of C-V measurement showed that proton implantation introduces a Gaussian like distribution of shallow hydrogen donors that corresponds to the profile of implanted hydrogen obtained from the secondary ion mass spectroscopy measurement. Subsequent isochronal annealing leads to annealing out of hydrogen donors (~250{degree sign}C) and formation of a series of hydrogen thermal donors (250-350{degree sign}C). In substrates with enhanced concentration of oxygen, the radiation enhanced thermal donors and ordinary thermal donors (>400{degree sign}C) were registered. It was shown that the introduction rate of hydrogen and thermal hydrogen donor layers is enhanced in materials with higher oxygen concentration. However, low oxygen concentration is preferred when better control over spatial distribution of the excess donor profiles is required.

show abstract

Section: Methodsmentioning

confidence: 99%

Electrical Characterization of Deep-Lying Donor Layers Created by Proton Implantation and Subsequent Annealing in N-Type Float Zone and Czochralski Silicon

Komarnitskyy¹,

Hazdra²

2009

ECS Trans.

View full text Add to dashboard Cite

show abstract

“…Taking into account results of shallow donor profiling, it can be speculated that increasing concentration of hydrogenated VO centers is a result of HD transformation when released hydrogen reacts with defects containing oxygen (VO, C i O i ) giving rise to both the deep (E3) and shallow (SHD, HDD) levels. Above 350°C, VO and V 2 O complexes are annealed with subsequent formation of multiple vacancy V n and VO n complexes [9] exhibiting deep levels A3-A4. For low irradiation fluences, these centres remain strongly localized close to the alpha's range where the initial radiation damage peaked [10].…”

Section: Resultsmentioning

confidence: 99%

Radiation Defects and Thermal Donors Introduced in Silicon by Hydrogen and Helium Implantation and Subsequent Annealing

Hazdra

Komarnitskyy

2007

SSP

View full text Add to dashboard Cite

The effect of high-energy hydrogen and helium implantation and subsequent annealing on generation of radiation defects and shallow donors in the low-doped oxygen-rich FZ n-type silicon was investigated. Samples were implanted with 7 MeV 4He2+ or 1.8 MeV 1H+ to fluences ranging from 1x109 to 3x1011 cm-2 and 1.4x1010 to 5x1012cm-2, resp., and then isochronally annealed for 30 minutes in the temperature range up to 550°C. Results show that radiation damage produced by helium ions remarkably enhances formation of thermal donors (TDs) when annealing temperature exceeds 375°C, i.e. when the majority of vacancy-related recombination centers anneals out. The excess concentration of TDs is proportional to the helium fluence and peaks at 1.6x1014cm-3 if annealing temperature reaches 475°C. Proton irradiation itself introduces hydrogen donors (HDs) which form a Gaussian peak at the proton end-of-range. Formation and annealing of shallow and deep hydrogen-related levels are strongly influenced by electric field at annealing temperatures below 175°C. If annealing temperature exceeds 350°C, HDs disappear and the excessive shallow doping is caused, as in the case of helium irradiation, by radiation enhanced TDs.

show abstract

“…Redistribution subject to ECS terms of use (see 128.255.6.125 Downloaded on 2015-07-01 to IP treatment was characterized by a monotonic increase of the concentration from the semiconductor surface into the bulk material, and was equal to the silicon substrate concentration for depths greater than 19 µm. This reduction in the conductivity of the irradiated area is caused by compensation effects due to irradiation-induced deep defect levels such as multiple vacancy V n and V n O m complexes (14). The fact that this area extended up to depths of 19 µm while the He ion range was only 16.3 µm is attributed to the diffusion of the defects during the annealing step.…”

Section: Donor Formation By He Implantation and Subsequent H-plasma Tmentioning

confidence: 99%

Hydrogen-Related Donor Formation: Fabrication Techniques, Characterization, and Application to High-voltage Superjunction Transistors

et al. 2006

View full text Add to dashboard Cite

Hydrogen-induced doping can be used to create n-doped layers and columns in semiconductor devices. We investigated two techniques to form n-type layers and columns: Proton implantation followed by an annealing step in an inert atmosphere, and helium implantation followed by a hydrogen-plasma treatment. Spreadingresistance measurements and capacitance-voltage measurements were applied to analyze the doping distribution along the implantation direction. Scanning capacitance microscopy and light microscope images after selective etching were used for twodimensional dopant profiling. Finally, we showed that hydrogenrelated donor formation can be successfully applied to create highvoltage superjunction transistors.

show abstract

Enhanced formation of thermal donors in oxygen-implanted silicon annealed at different pressures

Cited by 7 publications

References 19 publications

Electrical Characterization of Deep-Lying Donor Layers Created by Proton Implantation and Subsequent Annealing in N-Type Float Zone and Czochralski Silicon

Electrical Characterization of Deep-Lying Donor Layers Created by Proton Implantation and Subsequent Annealing in N-Type Float Zone and Czochralski Silicon

Radiation Defects and Thermal Donors Introduced in Silicon by Hydrogen and Helium Implantation and Subsequent Annealing

Hydrogen-Related Donor Formation: Fabrication Techniques, Characterization, and Application to High-voltage Superjunction Transistors

Contact Info

Product

Resources

About