2018
DOI: 10.1109/led.2018.2881983
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Enhanced Flexible Piezoelectric Sensor by the Integration of P(VDF-TrFE)/AgNWs Film With a-IGZO TFT

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Cited by 23 publications
(15 citation statements)
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“…Figure d and Figure S2, Supporting Information, show the simulation results of the voltage gain and the transient response of the amplifier as a function of T 4 resistance, respectively. Within the resistance range of 1–10 MΩ for T 4 , it is clear that higher voltage gain and fast operation are achieved with high‐resistance of T 4 . For instance, the gain increased from 10.6 to 56.5 V V −1 when the resistance was changed from 1 to 10 MΩ.…”
Section: Resultsmentioning
confidence: 94%
See 1 more Smart Citation
“…Figure d and Figure S2, Supporting Information, show the simulation results of the voltage gain and the transient response of the amplifier as a function of T 4 resistance, respectively. Within the resistance range of 1–10 MΩ for T 4 , it is clear that higher voltage gain and fast operation are achieved with high‐resistance of T 4 . For instance, the gain increased from 10.6 to 56.5 V V −1 when the resistance was changed from 1 to 10 MΩ.…”
Section: Resultsmentioning
confidence: 94%
“…Within the resistance range of 1-10 MΩ for T 4 , it is clear that higher voltage gain and fast operation are achieved with high-resistance of T 4 . [30,31] For instance, the gain increased from 10.6 to 56.5 V V −1 when the resistance was changed from 1 to 10 MΩ. In this perspective, although the n-type a-IGZO TFTs may exhibit high field-effect mobility, their low resistance could limit the amplifier performance particularly when it is used as the load transistor.…”
Section: Introductionmentioning
confidence: 99%
“…The various approaches in fabricating pressure sensors include resistive types [7,21,39,70,95,104,127,136,208,296,[413][414][415][416][417][418][419][420][421][422][423], capacitive types [25,71,146,303,310,321,352,[424][425][426][427], field-effect transistors [9][10][11]193,428], and the piezocapacitive and piezoelectric properties of materials [214,[429][430][431]. Pressure sensors' most important parameters are sensitivity, detection range and response time.…”
Section: Pressure Sensorsmentioning
confidence: 99%
“…The piezoelectricity of functionalised organic materials has been explored through a AgNW functionalised P(VDF-TrFE) piezocapacitor built on top of an a-IGZO TFT on a PI substrate [430]. The doping of P(VDF-TrFE) with AgNWs improved the material's piezoelectric performance.…”
Section: Piezocapacitive and Piezoelectric Pressure Sensorsmentioning
confidence: 99%
“…[ 3 ] Among them, soft strain sensors can detect the movement of hands and limbs, [ 4 ] blood pulse, [ 5 ] and respiration rate, [ 6 ] indicating the vital signs of the human body. These sensors work with different sensing mechanisms [ 7 ] e.g., piezo‐resistivity, [ 4b ] capacitance, [ 8 ] and piezo‐electricity [ 9 ] would transduce the strain, pressure, force and vibration into electrical signal.…”
Section: Introductionmentioning
confidence: 99%