Enhanced Field Emission from GaN and AlN Mixed-Phase Nanostructured Film

Wang, Ru-Zhi; Zhao, Wei; Wang, Bo; Yan, Hui

doi:10.1021/jp210103k

Cited by 9 publications

(7 citation statements)

References 26 publications

(42 reference statements)

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“…Effects of structure on the field enhancement factor of GaN NFs SEM analysis revealed the samples were composed of different sizes of GaN nanoparticles, which implies that their surface roughness is different. Because surface roughness greatly influences the field enhancement factors of samples, 37 the surface roughness of samples A-E was measured by AFM, as shown in Fig. 8.…”

Section: Dependence Of Work Function On Film Structurementioning

confidence: 99%

Structural effects of field emission from GaN nanofilms on SiC substrates

Chen

Wang

Liu

et al. 2014

Journal of Applied Physics

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GaN nanofilms (NFs) with different structures are grown on SiC substrates by pulsed laser deposition under different conditions. The synthesized GaN NFs are studied by X-ray diffraction, field-emission (FE) scanning electron microscopy, X-ray photoelectron spectroscopy, and atomic force microscopy. The GaN NFs are composed of diversified GaN nanoparticles with a diameter of 9-38 nm, thickness of 10-50 nm, and roughness of 0.22-13.03 nm. FE from the GaN NFs is structure dependent, which is explained by stress changing the band gap of the NFs. By structure modulation, the turn-on field of GaN NFs can be as low as 0.66 V/lm at a current density of 1 lA/cm 2 , with a current density of up to 1.1 mA/cm 2 at a field of 4.18 V/lm. Fowler-Nordheim curves of some samples contain multiple straight lines, which originate from the structural change and diversification of GaN nanoparticles under an applied field. Overall, our results suggest that GaN NFs with excellent FE properties can be prepared on SiC substrates, which provides a new route to fabricate high-efficiency FE nanodevices. V C 2014 AIP Publishing LLC. [http://dx.

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Section: Dependence Of Work Function On Film Structurementioning

confidence: 99%

Structural effects of field emission from GaN nanofilms on SiC substrates

Chen

Wang

Liu

et al. 2014

Journal of Applied Physics

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“…1 Engineering the band gap of AlN, GaN and InN finds different applications in the semiconducting industry for their various optoelectronic properties such as photovoltaic, hydrogen storage, light and field emissions. [2][3][4][5][6] Because of the capability to create two-dimensional electron gas at the hetero-junctions, the III-nitrides are used for developing high electron mobility transistors along with the hetero-junction field effect transistors and bipolar transistors. 7 III-nitride based photonic device is also used as ultraviolet (UV)-blue light emissions.…”

Section: Introductionmentioning

confidence: 99%

Piezoelectric domains in the AlGaN hexagonal microrods: Effect of crystal orientations

Sivadasan

Mangamma

Bera

et al. 2016

Journal of Applied Physics

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Presently, the piezoelectric materials are finding tremendous applications in the micro-mechanical actuators, sensors and self-powered devices. In this context, the studies pertaining to piezoelectric properties of materials in the different size ranges are very important for the scientific community. The III-nitrides are exceptionally important, not only for optoelectronic but also for their piezoelectric applications. In the present study, we synthesized AlGaN via self catalytic vapor-solid mechanism by atmospheric pressure chemical vapor deposition technique on AlN base layer over intrinsic Si(100) substrate. The growth process is substantiated using X-ray diffraction and X-ray photoelectron spectroscopy. The Raman and photoluminescence study reveal the formation of AlGaN microrods in the wurtzite phase and ensures the high optical quality of the crystalline material. The single crystalline, direct wide band gap and hexagonally shaped AlGaN microrods are studied for understanding the behavior of the crystallites under the application of constant external electric field using the piezoresponse force microscopy. The present study is mainly focused on understanding the behavior of induced polarization for the determination of piezoelectric coefficient of AlGaN microrod along the c-axis and imaging of piezoelectric domains in the sample originating because of the angular inclination of AlGaN microrods with respect to its AlN base layers.2

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“…11 However, compared with bulk materials, 1D nanostructured materials are relatively unstable and can be easily deformed during operation, especially under large current and high power density conditions. 12 The operating voltages of the as-prepared ZnO for FE are generally high because of relatively high electron affinity ($4.5 eV) 13 and large work function ($5.3 eV), 14 which may limit its practical application. It is therefore essential to evaluate the FE performance of ZnO nanorods in detail.…”

Section: Introductionmentioning

confidence: 99%