Enhanced ferroelectric properties of (Zn, Ti) equivalent co-doped BiFeO3 films prepared via the sol-gel method

Zhang, Chang-Chang; Dai, Jianhui; Liang, Xiaoguang

doi:10.1016/j.ceramint.2021.02.250

Cited by 20 publications

(10 citation statements)

References 41 publications

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“…In addition, grain boundaries hinder electron migration and reduce leakage current density. According to the SEM results, the BSFMx = 0.04 film has the smallest grain size, indicating that it has more grain boundaries and greater resistance to electron migration [ 26 , 42 ].…”

Section: Resultsmentioning

confidence: 99%

“…In addition, the leakage mechanism changes from Ohmic conduction under a low electric field to F-N tunneling under a high electric field. Zhang et al prepared high-quality BiFe 1 −2x Zn x Ti x O 3 (BFZTO, x = 0, 0.01, 0.02, 0.03, 0.04, and 0.05) films [ 26 ]. The authors found that the BFZTO film with x = 0.02 had uniform fine grains and high density, which can inhibit the transformation of Fe 3+ to Fe 2+ and, thus, greatly reduce the oxygen vacancy concentration.…”

Section: Introductionmentioning

confidence: 99%

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Phase Structure and Electrical Properties of Sm-Doped BiFe0.98Mn0.02O3 Thin Films

Wang

et al. 2021

Nanomaterials

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Bi1−xSmxFe0.98Mn0.02O3 (x = 0, 0.02, 0.04, 0.06; named BSFMx) (BSFM) films were prepared by the sol-gel method on indium tin oxide (ITO)/glass substrate. The effects of different Sm content on the crystal structure, phase composition, oxygen vacancy content, ferroelectric property, dielectric property, leakage property, leakage mechanism, and aging property of the BSFM films were systematically analyzed. X-ray diffraction (XRD) and Raman spectral analyses revealed that the sample had both R3c and Pnma phases. Through additional XRD fitting of the films, the content of the two phases of the sample was analyzed in detail, and it was found that the Pnma phase in the BSFMx = 0 film had the lowest abundance. X-ray photoelectron spectroscopy (XPS) analysis showed that the BSFMx = 0.04 film had the lowest oxygen vacancy content, which was conducive to a decrease in leakage current density and an improvement in dielectric properties. The diffraction peak of (110) exhibited the maximum intensity when the doping amount was 4 mol%, and the minimum leakage current density and a large remanent polarization intensity were also observed at room temperature (2Pr = 91.859 μC/cm2). By doping Sm at an appropriate amount, the leakage property of the BSFM films was reduced, the dielectric property was improved, and the aging process was delayed. The performance changes in the BSFM films were further explained from different perspectives, such as phase composition and oxygen vacancy content.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Phase Structure and Electrical Properties of Sm-Doped BiFe0.98Mn0.02O3 Thin Films

Wang

et al. 2021

Nanomaterials

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“…Ferroelectric materials have been developed over a long period of time and are currently available in a variety of forms, [40,41,[44][45][46] including bulk materials (Figure 1c), [44,47,48] thin-film materials (Figure 1e), [46,[49][50][51] and nanomaterials (Figure 1f-i), [40,45,52,53] which enriched the types of ferroelectric materials and provided more possibilities for their applications. At present, most ferroelectric devices are prepared with thin-film materials.…”

Section: Ferroelectric Photovoltaic Materialsmentioning

confidence: 99%

Ferroelectric Photovoltaic Materials and Devices

Han

Yang

2021

Adv Funct Materials

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Ferroelectric materials have been a focus of much research over the last few decades for their unique piezoelectric and optoelectronic properties. Conventional solar cells have been devised based on the photovoltaic effect of semiconductor p–n junctions, with their photogenerated voltage being influenced by the bandgap of the semiconductors, limiting their further development. Ferroelectric photovoltaics have attracted attention for their unusual photovoltaic effect and controllability. The photogenerated voltage that is independent of bandgap along the polarization direction can be generated in ferroelectric materials, undoubtedly making up for the lack of solar cells. Ferroelectric materials have been used in a wide range of piezoelectric, storage, sensor, and optoelectronic because of their unique optical and electrical properties. However, the small photogenerated current of ferroelectric photovoltaic devices is one of the challenges that need to be overcome. Researchers have shown that the photogenerated current of ferroelectric photovoltaic devices can be significantly improved by cation doping and heterostructure construction, reigniting the enthusiasm for the investigation of ferroelectric photovoltaics. This paper reviews a variety of ferroelectric photovoltaic materials, the mechanism of ferroelectric photovoltaics, approaches for improving ferroelectric photovoltaic performance, and the applications and future prospects for ferroelectric materials.

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“…BiFeO 3 (BFO), a unique single-phase multiferroic material exhibiting both ferroelectricity and ferromagnetism at room temperatures due to its high Curie temperature (T C ∼1103 K) and Nëel temperature (T N ∼643 K) [1,2], is widely studied for the varied functional characteristics such as ferroelectricity [3,4], magnetism [5], multiferroism [6], optical functionality [7], high dielectric susceptibility [8] and piezoelectricity [9], etc, presents a great potential for pragmatic applications in nonvolatile ferroelectric memory devices [10], memristors [11], and photovoltaic devices [12]. Moreover, compared with most classical ferroelectric materials, BFO has a relatively lower bandgap (2.18∼2.67 eV as reported) [13], large remnant polarization (P r , ∼100 μC cm −2 ) [14] and high transparency.…”

Section: Introductionmentioning

confidence: 99%

Modulating light absorption and multiferroic properties of BiFeO₃-based ferroelectric films by the introduction of ZnO layer

Zhang

Guo

et al. 2022

Mater. Res. Express

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Pure bismuth ferrite (BiFeO3, BFO) and ZnO thin films, as well as BFO/ZnO and ZnO/BFO composite thin films were successfully deposited by a sol-gel process on Pt/Ti/SiO2/Si and FTO/glass substrates, respectively. The chemical composition, surface morphology, optical properties, and multiferroicity were systematically investigated. X-ray diffraction and electron microscopy measurements were used to determine the crystalline phase and to analyze the surface morphology. Evidently, the absorption edges of both BFO/ZnO and ZnO/BFO films show a redshift, broadening the absorption range. The leakage current density decreases with the introduction of ZnO, and the ferroelectricity was significantly improved of the bilayers. Thereinto, BFO/ZnO and ZnO/BFO show the highest saturate polarization (2P s) of 46.7 μc/cm2 and the maximum remanent polarization (2P r) of 18.5 μc/cm2, respectively. Meanwhile, the magnetization measurement revealed that both BFO/ZnO and ZnO/BFO exhibiting an enhanced magnetization, especially, BFO/ZnO displays the highest saturation magnetization (2M s, 68.87 emu/cm3) and remanent magnetization (2M r, 4.87 emu/cm3).

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Enhanced ferroelectric properties of (Zn, Ti) equivalent co-doped BiFeO3 films prepared via the sol-gel method

Cited by 20 publications

References 41 publications

Phase Structure and Electrical Properties of Sm-Doped BiFe0.98Mn0.02O3 Thin Films

Phase Structure and Electrical Properties of Sm-Doped BiFe0.98Mn0.02O3 Thin Films

Ferroelectric Photovoltaic Materials and Devices

Modulating light absorption and multiferroic properties of BiFeO₃-based ferroelectric films by the introduction of ZnO layer

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Enhanced ferroelectric properties of (Zn, Ti) equivalent co-doped BiFeO3 films prepared via the sol-gel method

Cited by 20 publications

References 41 publications

Phase Structure and Electrical Properties of Sm-Doped BiFe0.98Mn0.02O3 Thin Films

Phase Structure and Electrical Properties of Sm-Doped BiFe0.98Mn0.02O3 Thin Films

Ferroelectric Photovoltaic Materials and Devices

Modulating light absorption and multiferroic properties of BiFeO3-based ferroelectric films by the introduction of ZnO layer

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Modulating light absorption and multiferroic properties of BiFeO₃-based ferroelectric films by the introduction of ZnO layer